The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2010
Filed:
May. 12, 2008
Satoshi Kamiyama, Nagoya, JP;
Hiroshi Amano, Nagoya, JP;
Isamu Akasaki, Nagoya, JP;
Motoaki Iwaya, Inazawa, JP;
Masahiro Yoshimoto, Kyoto, JP;
Hiroyuki Kinoshita, Yasu, JP;
Satoshi Kamiyama, Nagoya, JP;
Hiroshi Amano, Nagoya, JP;
Isamu Akasaki, Nagoya, JP;
Motoaki Iwaya, Inazawa, JP;
Masahiro Yoshimoto, Kyoto, JP;
Hiroyuki Kinoshita, Yasu, JP;
Meijo University, Nagoya-shi, Aichi, JP;
National University Corporation Kyoto Institute of Technology, Kyoto-shi, Kyoto, JP;
Abstract
The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×10cm; donor impurities that are in a concentration less than 1×10cmand greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×10cmand donor impurities that are in a concentration less than 1×10cmand greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.