The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Dec. 08, 2017
Meijo University, Nagoya-shi, Aichi, JP;
Stanley Electric Co., Ltd., Meguro-ku, Tokyo, JP;
Tetsuya Takeuchi, Nagoya, JP;
Isamu Akasaki, Nagoya, JP;
Shinichi Tanaka, Kanagawa, JP;
Kazufumi Tanaka, Akishima, JP;
STANLEY ELECTRIC CO., LTD., Tokyo, JP;
MEIJO UNIVERSITY, Nagoya-shi, Aichi, JP;
Abstract
A semiconductor multilayer film mirror is configured such that a pair of an InAlN-based semiconductor film and a GaN-based semiconductor film is layered a plurality of times in a cyclic fashion and the InAlN-based semiconductor film has an In composition of less than 18 at %. The semiconductor multilayer film mirror includes a thin GaN cap layer formed on the InAlN-based semiconductor film and an AlGaN layer formed on the thin GaN cap layer between each pair of the InAlN-based semiconductor film and the GaN-based semiconductor film.