Other

Toyoda Gosei Co., Ltd.

Meijo University

Nagoya University

Research Development Corporation of Japan

Pioneer Electronic Corporation

Stanley Electric Co., Ltd

Kabushiki Kaisha Toyota Chuo Kenkyusho

Kyocera Corporation

Koito Manufacturing Company, Ltd.

Japan Science and Technology Agency

Lumileds Lighting U.s., LLC

Kyoto Institute of Technology

Pioneer Electric Corporation

Research Development Corporation

Isamu Akasaki

Hiroshi Amano

Norikatsu Koide

Katsuhide Manabe

Hisaki Kato

Shiro Yamazaki

Tetsuya Takeuchi

Michinari Sassa

Motoaki Iwaya

Akira Mabuchi

Satoshi Kamiyama

Masafumi Hashimoto

Masayoshi Koike

Shiro Yamasaki

Atsushi Watanabe

Kazuyoshi Iida

Seiji Nagai

Takanobu Akagi

Kazumasa Hiramatsu

Toshiyuki Tanaka

Masahiro Kotaki

Masaki Oya

Michael Ragan Krames

Shinichi Tanaka

Naoki Shibata

Akira Hirano

Koji Okuno

Hiroyuki Ota

Hiroyuki Kinoshita

Norihide Yamada

Satoshi Miyaguchi

Tetsu Kachi

Yoshinori Kimura

Kazuyoshi Tomita

Hitoshi Sato

Jiro Matsuo

Mamoru Miyachi

Isao Yamada

Yoshiaki Watanabe

Ryo Nakamura

Hirokazu Takahashi

Masahiro Yoshimoto

Junichi Umezaki

Kazufumi Tanaka

Nobuhiko Sawaki

Naoki Sone

Sho Iwayama

Teruo Tohma

Takanori Yasuda

Koichi Mizutani

Hisanori Kojima

Kenjo Matsui

Toshiki Yasuda

Hideki Kasugai

Yuka Kuwano

Daisuke Komori

Toshiya Matsuda

Kaku Takarabe

Lu Weifang

Masafumi Hasimoto

Theeradetch Detchprohm

To suppress current leakage between the semiconductor layer below the mask and the buried layer above the mask. To reduce the drive voltage and improve the emission efficiency by improving the efficiency of carrier injection into the active layer. The semiconductor light-emitting device includes a substrate, a mask, a columnar semiconductor, a buried layer, a cathode electrode, and an anode electrode. The substrate has a conductive substrate, an n-type semiconductor layer disposed on the conductive substrate, and a p-type semiconductor layer disposed on the n-type semiconductor layer. The p-type semiconductor layer has a high resistance, thereby enhancing insulation between the n-type semiconductor layer and the buried layer.

Semiconductor device and method for producing semiconductor device

Provided is a semiconductor light emitting device including a growth substrate; a pillar-shaped semiconductor layer formed on the growth substrate; and a buried semiconductor layer formed to cover the pillar-shaped semiconductor layer, wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer formed on an outermore side than the n-type nanowire layer, a p-type semiconductor layer formed on an outermore side than the active layer and a tunnel junction layer formed on an outermore side than the p-type semiconductor layer, and wherein at least a part of the pillar-shaped semiconductor layer is provided with a removed region formed by removing from the buried semiconductor layer to a part of the tunnel junction layer.

Semiconductor light emitting device and manufacturing method of semiconductor light emitting device

To provide a Group III nitride semiconductor light-emitting device exhibiting the improved light extraction efficiency as well as reducing the influence of polarization that a p-type conductivity portion and an n-type conductivity portion occur in the AlGaN layer caused by the Al composition variation, and a production method therefor. A first p-type contact layer is a p-type AlGaN layer. A second p-type contact layer is a p-type AlGaN layer. The Al composition in the first p-type contact layer is reduced with distance from a light-emitting layer. The Al composition in the second p-type contact layer is reduced with distance from the light-emitting layer. The Al composition in the second p-type contact layer is lower than that in the first p-type contact layer. The Al composition variation rate to the unit thickness in the second p-type contact layer is higher than that in the first p-type contact layer.

Group III nitride semiconductor light-emitting device and production method therefor

Achieving resistance reduction of a nitride semiconductor multilayer film reflector. In the nitride semiconductor multilayer film reflector, a first semiconductor layer has a higher Al composition than a second semiconductor layer. A first composition-graded layer is interposed between the first and second semiconductor layers so as to be located at a group III element face side of the first semiconductor layer, the first composition-graded layer being adjusted so that its Al composition becomes lower as coming close to the second semiconductor layer. A second composition-graded layer is interposed between the first and second semiconductor layers so as to be located at a nitride face side of the first semiconductor layer. The second composition-graded layer is adjusted so that its Al composition becomes lower as coming close to the second semiconductor layer.

Nitride semiconductor multilayer film reflector and light-emitting device using the same

Provided is a semiconductor multilayer film reflecting mirror formed by alternately repeating a first nitride film containing In (indium) and a second nitride film not containing In. The reflecting mirror includes an inter-film transition layer between the first and second nitride films, the composition of which is varied from the composition of the first nitride film to the composition of the second nitride film. The inter-film transition layer has a first transition layer formed on the first nitride film and containing In and Al (aluminum), and a second transition layer formed on the first transition layer and containing Al but not containing In. In the first transition layer, the percentages of In and Al are decreased from the first nitride film to the second transition layer, and the percentage of In in the first transition layer starts to decrease at a same or closer position to the first nitride film than the percentage of Al.

Semiconductor multilayer film reflecting mirror, vertical cavity light-emitting element using the reflecting mirror, and methods for manufacturing the reflecting mirror and the element

A semiconductor multilayer film mirror is configured such that a pair of an InAlN-based semiconductor film and a GaN-based semiconductor film is layered a plurality of times in a cyclic fashion and the InAlN-based semiconductor film has an In composition of less than 18 at %. The semiconductor multilayer film mirror includes a thin GaN cap layer formed on the InAlN-based semiconductor film and an AlGaN layer formed on the thin GaN cap layer between each pair of the InAlN-based semiconductor film and the GaN-based semiconductor film.

Semiconductor multilayer film mirror, vertical cavity type light-emitting element using the mirror, and methods for manufacturing the mirror and the element

A nitride semiconductor light-emitting device with periodic gain active layers includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator. The device further includes a plurality of active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator and at least one interlayer disposed between the active layers. The active layer disposed at the p-type semiconductor layer side has a larger light emission intensity than the active layer disposed at the n-type semiconductor layer side.

Nitride semiconductor light-emitting device with periodic gain active layers

This application provides a method of manufacturing an n-p-n nitride-semiconductor light-emitting device which includes a current confinement region (A) using a buried tunnel junction layer and in which a favorable luminous efficacy can be obtained and to provide the n-p-n nitride-semiconductor light-emitting device. The p-type activation of a p-type GaN crystal layer stacked below a tunnel junction layer is performed in an intermediate phase of a manufacturing process in which the p-type GaN crystal layer is exposed to atmosphere gas with the tunnel junction layer partially removed, before the tunnel junction layer is buried in an n-type GaN crystal layer. In the intermediate phase of the manufacturing process in which the p-type GaN crystal layer is exposed, p-type activation is efficiently performed on the p-type GaN crystal layer, and a p-type GaN crystal layer with low electric resistance can be obtained.

Method of manufacturing n-p-n nitride-semiconductor light-emitting device, and n-p-n nitride-semiconductor light-emitting device

A nitride semiconductor light emitting device includes a substrate as a base and an n-type semiconductor layer grown on a surface side of the substrate. Antimony (Sb) is added to the n-type semiconductor layer so that a molar fraction is not less than 0.1% and is less than 1%. A concentration of an n-type impurity in the n-type semiconductor layer is lower than an electron concentration.

Nitride semiconductor light emitting device and method of fabricating the same

An object is to improve a positive hole injection efficiency into an active layer in a nitride semiconductor light-emitting device. The nitride semiconductor light-emitting device is formed by stacking nitride semiconductor crystals each of which contains Al and has a polar or semipolar surface either serving as a growth face. The device includes an active layer (), and first and second composition-graded layers (). The active layer () is interposed between the first and second composition-graded layers (). Each one of the first and second composition-graded layers is composition-graded so that an Al composition value is rendered smaller as each one of the first and second composition-graded layers () comes close to a side where a sum of spontaneous polarization and piezoelectric polarization is negative.

Nitride semiconductor light-emitting device

The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode.

Light-emitting semiconductor device

The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5&#xd7;10cm; donor impurities that are in a concentration less than 1&#xd7;10cmand greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5&#xd7;10cmand donor impurities that are in a concentration less than 1&#xd7;10cmand greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.

SiC crystal and semiconductor device

The present invention discloses a two-light flux interference exposure device comprising: a laser light source provided in a laser resonator; a single harmonic generation device provided in the laser resonator for converting laser light output by the laser light source to higher harmonics; an etalon provided in the laser resonator so as to serve as a narrowband wavelength filter; a beam splitter dividing laser light output outside the laser resonator into two light fluxes; and an interference optic system causing the light fluxes to interfere with each other on a target to be exposed.

Two-light flux interference exposure device, two-light flux interference exposure method, semiconductor light emitting element manufacturing method, and semiconductor light emitting element

The present invention discloses a semiconductor, includes one or more luminescent layers; and one or more electron gas layers with two-dimensional electron gases that are distributed parallel to the luminescent layers.

Semiconductor and method of semiconductor fabrication

The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the translucent portion by vapor deposition; providing kinetic energy to the covering layer for forming a periodic mask; forming a periodic structure on the translucent portion by using the periodic mask.

Method for fabricating a semiconductor device and semiconductor device

Growing community of inventors

Nagoya, Japan

Isamu Akasaki