The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
May. 02, 2006
Kazumasa Hiramatsu, Yokkaichi, JP;
Hideto Miyake, Tsu, JP;
Yoshihiko Tsuchida, Tsukuba, JP;
Yoshinobu Ono, Tsukubamirai, JP;
Naohiro Nishikawa, Tsukuba, JP;
Kazumasa Hiramatsu, Yokkaichi, JP;
Hideto Miyake, Tsu, JP;
Yoshihiko Tsuchida, Tsukuba, JP;
Yoshinobu Ono, Tsukubamirai, JP;
Naohiro Nishikawa, Tsukuba, JP;
Sumitomo Chemical Company Limited, Tokyo, JP;
National University Corporation Mie University, Tsu-shi, Mie, JP;
Abstract
A group 3-5 nitride semiconductor multilayer substrate () and a method for manufacturing such substrate are provided. A semiconductor layer () is formed on a base substrate (), and a mask () is formed on the semiconductor layer (). Then, after forming a group 3-5 nitride semiconductor crystalline layer () by selective growing, the group 3-5 nitride semiconductor crystalline layer () and the base substrate () are separated. The crystallinity of the semiconductor layer () is lower than that of the group 3-5 nitride semiconductor crystalline layer ().