The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 1998
Filed:
May. 17, 1996
Applicant:
Inventors:
Kazuyuki Tadatomo, Itami, JP;
Shinichi Watabe, Itami, JP;
Hiroaki Okagawa, Itami, JP;
Kazumasa Hiramatsu, Yokkaichi, JP;
Assignee:
Mitsubishi Cable Industries, Ltd., Hyogo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 90 ; 117 94 ; 117 97 ;
Abstract
A GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 .mu.m, a method for producing the GaN single crystal having superior quality and sufficient thickness permitting its use as a substrate and a semiconductor light emitting element having high luminance and high reliability, comprising, as a substrate, the GaN single crystal having superior quality and/or sufficient thickness permitting its use as a substrate.