Sumitomo Chemical Company, Limited

Toyoda Gosei Co., Ltd.

Nagoya University

Mitsubishi Cable Industries, Ltd.

Other

Pioneer Electronic Corporation

Mie University

Kazumasa Hiramatsu

Hiroshi Amano

Isamu Akasaki

Hideto Miyake

Takayoshi Maeda

Yasushi Iyechika

Hiroaki Okagawa

Kazuyuki Tadatomo

Katsuhide Manabe

Shinya Bohyama

Yoshinobu Ono

Shinichi Watabe

Nobuo Okazaki

Youichiro Ohuchi

Hisaki Kato

Atsushi Watanabe

Yoshihiko Tsuchida

Nobuhiko Sawaki

Masahiro Koto

Sumito Shimizu

Naohiro Nishikawa

Keiji Miyashita

Yutaka Hamamura

Takumi Shibata

Katsunori Yahashi

Isamu Akazaki

Theeradetch Detchprohm

A group 3-5 nitride semiconductor multilayer substrate () and a method for manufacturing such substrate are provided. A semiconductor layer () is formed on a base substrate (), and a mask () is formed on the semiconductor layer (). Then, after forming a group 3-5 nitride semiconductor crystalline layer () by selective growing, the group 3-5 nitride semiconductor crystalline layer () and the base substrate () are separated. The crystallinity of the semiconductor layer () is lower than that of the group 3-5 nitride semiconductor crystalline layer ().

Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing subtrate, and semiconductor element

The present invention relates to a method for producing an epitaxial substrate having a III-V group compound semiconductor crystal represented by the general formula InGaAlN (wherein, x+y+z=1, 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;z&#x2266;1) having reduced dislocation density, comprising a first step of covering with a mask made of a different material from the III-V group compound semiconductor so that only portions around points of the crystal constitute openings by using a III-V group compound semiconductor crystal having a plurality of projection shapes and a second step of growing the III-V group compound semiconductor crystal laterally by using the III-V group compound semiconductor crystal at the opening as a seed crystal. According to the present invention, an epitaxial substrate having a III-V group compound semiconductor crystal having low dislocation density and little warp is obtained.

Substrate of gallium nitride single crystal and process for producing the same

When a crystal layer of III-V Group nitride compound semiconductor is formed, a nitride compound semiconductor layer is first overlaid on a substrate to form a base layer and a III-V Group nitride compound semiconductor represented by the general formula InGaAlN (where 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;z&#x2266;1, x+y+z=1) is epitaxially grown on the base layer by hydride vapor phase epitaxy at a deposition pressure of not lower than 800 Torr. By making the deposition pressure not lower than 800 Torr, the crystallinity of the III-V Group nitride compound semiconductor can be markedly improved and its defect density reduced.

Method of manufacturing III-V group compound semiconductor

Provided is a III-V compound semiconductor having a layer formed from a first III-V compound semiconductor expressed by the general formula InGaAlN (where 0&#x2266;u&#x2266;1, 0&#x2266;v&#x2266;1, 0&#x2266;w&#x2266;1, u+v+w=1), a pattern formed on the layer from a material different not only from the first III-V compound semiconductor but also from a second III-V compound semiconductor hereinafter described, and a layer formed on the first III-V compound semiconductor and the pattern from the second III-V compound semiconductor expressed by the general formula InGaAlN (where 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;x&#x2266;1, x+y+z=1), wherein the full width at half maximum of the (0004) reflection X-ray rocking curve of the second III-V compound semiconductor is 700 seconds or less regardless of the direction of X-ray incidence. In the III-V compound semiconductor, which is a high quality semiconductor, the occurrence of low angle grain boundaries is suppressed.

III-V compound semiconductor

A method for fabricating a GaN-based III-V Group compound semiconductor is provided that utilizes a regrowth method based on the HVPE method to form a second III-V Group compound semiconductor layer having a flat surface on a first III-V Group compound semiconductor layer formed with a mask layer. The method uses a mixed carrier gas of hydrogen gas and nitrogen gas to control formation of a facet group including at least the &lcub;33-62&rcub; facet by the regrowth, and conducting the regrowth until a plane parallel to the surface of the first III-V Group compound semiconductor layer is once annihilated, thereby fabricating a III-V Group compound semiconductor having low dislocation density.

Method for fabricating III-V group compound semiconductor

A semiconductor light receiving element having a light receiving layer ( ) formed from a GaN group semiconductor, and an electrode ( ) formed on one surface of the light receiving layer as a light receiving surface ( ) in such a way that the light (L) can enter the light receiving layer is provided. When the light receiving element is of a Schottky barrier type, the aforementioned electrode ( ) contains at least a Schottky electrode, which is formed in such a way that, on the light receiving surface ( ), the total length of the boundary lines between areas covered with the Schottky electrode and exposed areas is longer than the length of the outer periphery of the light receiving surface ( ). In addition, when the light receiving element is of a photoconductive type, the aforementioned light receiving layer ( ) is a first conductivity type i layer, and the aforementioned electrode ( ) is an ohmic electrode of one polarity, and an ohmic electrode of the other polarity is formed directly or via a first conductivity type and low resistance GaN group semiconductor layer on the other surface of the light receiving layer ( ).

Semiconductor light receiving element

Provided is a method of producing a group III-V compound semiconductor having a low dislocation density without increasing the thickness of a re-grown layer, the method includes a re-growing process using a mask pattern, and threading dislocations in the re-grown layer are terminated by the voids formed on the pattern.

Group III-V compound semiconductor and method of producing the same

A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density.

GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof

A nitrogen-group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0, and a method for producing the same comprising the steps of forming a zinc oxide (ZnO) intermediate layer on a sapphire substrate, forming a nitrogen-group III semiconductor layer satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0 on the intermediate ZnO layer, and separating the intermediate ZnO layer by wet etching with an etching liquid only for the ZnO layer.

Method for producing group III nitride compound semiconductor substrates

A GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 .mu.m, a method for producing the GaN single crystal having superior quality and sufficient thickness permitting its use as a substrate and a semiconductor light emitting element having high luminance and high reliability, comprising, as a substrate, the GaN single crystal having superior quality and/or sufficient thickness permitting its use as a substrate.

GaN single crystal

Gan single crystal

A compound semiconductor vapor phase epitaxial device comprises a cylindrical reactor vessel, a plurality of flow channels disposed in the reactor vessel, a crystal substrate disposed in one of the flow channels, a plurality of gas supply pipes for respectively supplying gas containing element of compound to be grown on the crystal substrate and at least one slit or linearly arranged fine holes communicating adjacent two flow channels so as to extend in a direction normal to a direction of the gas flow to form a laminate layer flow consisting of two or more than two gases at an upstream portion of location of the crystal substrate.

Compound semiconductor vapor phase epitaxial device

A thin film of SiO.sub.2 is patterned on an N layer consisting of N-type Al.sub.x Ga.sub.1-x N (inclusive of x=0). Next, I-type Al.sub.x Ga.sub.1-x N (inclusive of x=0) is selectively grown and the portion on the N layer grows into an I-layer consisting an active layer of a light emitting diode, and that on the SiO.sub.2 thin film grows into a conductive layer. Electrodes are formed on the I-layer and conductive layer to constitute the light emitting diode. Also, on the surface a ({1120}) of a sapphire substrate, a buffer layer consisting of aluminum nitride is formed, onto which a gallium nitride group semiconductor is formed.

Gallium nitride group semiconductor and light emitting diode comprising

A substrate for producing a gallium nitride compound-semiconductor (Al.su Ga.sub.1-x N; X=0 inclusive) device in vapor phase on a sapphire substrate using gaseous organometallic compound, and a also blue light emitting diode produced by using the substrate. The buffer layer comprising aluminium nitride (AlN) and having a crystal structure where microcrystal or polycrystal is mixed in amorphous state, is formed on the sapphire substrate. The buffer layer is formed at a growth temperature of 380.degree. to 800.degree. C. to have a thickness of 100 to 500 .ANG.. Further, on the buffer layer is formed the layer of gallium nitride compound-semiconductor (Al.sub.x Ga.sub.1-x N; X=0 inclusive). The layer of gallium nitride compound-semiconductor (Al.sub.x Ga.sub.1-x N; X=0 inclusive) comprising at least two layers having different conductive types and being sequentially layered on the buffer layer, functions as a light emitting layer. The existence of the buffer layer having the aforementioned structure greatly contributes on the improved high-quality single crystal of the gallium nitride compound-semiconductor. On the other hand, the blue light emitting property is also improved due to the increase of the quality.

Substrate for growing gallium nitride compound-semiconductor device and

A process and apparatus, whereby in the process of vapor growth of a gallium nitride group semiconductor (Al.sub.x Ga.sub.1-x N; inclusive of x=0) thin film using an organometallic compound gas, a reactant gas which grows Al.sub.x Ga.sub.1-x N and a reactant gas containing a doping element are separately introduced near to a susceptor and mixed in the vicinity of a substrate held by the susceptor to grow an I-type Al.sub.x Ga.sub.1-x N thin film, are disclosed. Also, a process of vapor growth and apparatus having a mixing tube and a process and apparatus for inclining the susceptor relative to the reactant gas flow are disclosed. Moreover, a process and apparatus, whereby the Al.sub.x Ga.sub.1-x N thin film is subjected to the crystal growth using a plasma of the reactant gas under reduced pressure, under the irradiation of ultraviolet rays or laser beams, are disclosed.

Growing community of inventors

Yokkaichi, Japan

Kazumasa Hiramatsu