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For the Inventor, By the Inventor

Hillsboro, OR, United States of America

Johann Christian Rode

This inventor holds 19 USPTO granted patents and 6 published patent applications, primarily in III-N Transistor Technology. Top assignee: Intel Corporation. Active years: 2022-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Johann Christian Rode. Retrieved from https://idiyas.com/inventor/johann-christian-rode

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19 

% Patents Active = 100.0

Average Co-Inventor Count = 7.8

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:

goldMedal19 out of 56,365 
 
Intel Corporation
 patents

Years Active: 2022-2025

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Areas of Expertise:
Gallium Nitride
Transistor Gate Structure
Nonlinear Capacitance
Hybrid Dielectric Stacks
Threshold Voltage Tuning
Field Plate Structures
Integration Techniques
Planar Transistors
Wrap-Around Gates
Passive Components
Superlattice FINFET
Charge-Induced Tuning
19 patents (USPTO):Explore Patents
1. 12439627 - Gate structures to enable lower subthreshold slope in gallium nitride-based transistors (2025-10-07),
2. 12148757 - Integration of Si-based transistors with non-Si technologies by semiconductor regrowth over an insulator material (2024-11-19),
3. 12027613 - III-N transistor arrangements for reducing nonlinearity of off-state capacitance (2024-07-02),
4. 11881511 - Superlattice FINFET with tunable drive current capability (2024-01-23),
5. 11848362 - III-N transistors with contacts of modified widths (2023-12-19),
6. 11757027 - E-D mode 2DEG FET with gate spacer to locally tune VT and improve breakdown (2023-09-12),
7. 11715790 - Charge-induced threshold voltage tuning in III-N transistors (2023-08-01),
8. 11688788 - Transistor gate structure with hybrid stacks of dielectric material (2023-06-27),
9. 11670709 - III-N transistors with local stressors for threshold voltage control (2023-06-06),
10. 11658217 - Transistors with ion- or fixed charge-based field plate structures (2023-05-23),
11. 11652143 - III-N transistors integrated with thin-film transistors having graded dopant concentrations and/or composite gate dielectrics (2023-05-16),
12. 11626513 - Antenna gate field plate on 2DEG planar FET (2023-04-11),
13. 11610971 - Cap layer on a polarization layer to preserve channel sheet resistance (2023-03-21),
14. 11588037 - Planar transistors with wrap-around gates and wrap-around source and drain contacts (2023-02-21),
15. 11587924 - Integration of passive components in III-N devices (2023-02-21),

Title: Johann Christian Rode - Pioneering Inventor from Hillsboro

Introduction: Johann Christian Rode is a renowned inventor hailing from Hillsboro, Oregon. His innovative spirit and dedication to creating groundbreaking solutions have earned him a significant place in the world of patents and inventions.

Latest Patents: Johann Christian Rode holds several patents in various fields, including technology, engineering, and healthcare. His recent patents focus on sustainable energy solutions and advanced medical devices.

Career Highlights: With a career spanning over two decades, Johann Christian Rode has worked with leading research institutions and companies to bring his inventions to life. His contributions have significantly impacted industries such as renewable energy and biotechnology.

Collaborations: Throughout his career, Johann Christian Rode has collaborated with top universities, research institutions, and multinational companies to further develop his inventions. His collaborative efforts have led to the successful implementation of cutting-edge technologies in real-world applications.

Conclusion: Johann Christian Rode's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a pioneering inventor in Hillsboro, Oregon. His contributions continue to inspire future generations of inventors and shape the landscape of technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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