The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2023

Filed:

Dec. 17, 2018
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Sansaptak Dasgupta, Hillsboro, OR (US);

Marko Radosavljevic, Portland, OR (US);

Han Wui Then, Portland, OR (US);

Nidhi Nidhi, Hillsboro, OR (US);

Rahul Ramaswamy, Portland, OR (US);

Johann Rode, Hillsboro, OR (US);

Paul Fischer, Portland, OR (US);

Walid Hafez, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/205 (2006.01); H01L 29/10 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/207 (2006.01);
U.S. Cl.
CPC ...
H01L 29/205 (2013.01); H01L 21/0217 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/76224 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/2003 (2013.01); H01L 29/207 (2013.01); H01L 29/4236 (2013.01); H01L 29/42376 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01);
Abstract

An integrated circuit structure comprises a base layer that includes a channel region, wherein the base layer and the channel region include group III-V semiconductor material. A polarization layer stack is over the base layer, wherein the polarization layer stack comprises a buffer stack, an interlayer over the buffer stack, a polarization layer over the interlayer. A cap layer stack is over the polarization layer to reduce transistor access resistance.


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