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For the Inventor, By the Inventor

Portland, OR, United States of America

Rahul Ramaswamy

USPTO Granted Patents = 45 

 

Average Co-Inventor Count = 7.5

ph-index = 2

Forward Citations = 19(Granted Patents)


Location History:

  • Hillsboro, OR (US) (2017 - 2021)
  • Portland, OR (US) (2020 - 2024)

Company Filing History:

goldMedal45 out of 54,781 
 
Intel Corporation
 patents

Years Active: 2017-2025

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Areas of Expertise:
Nanowire Transistors
FinFET Architectures
III-N Transistors
Gate-All-Around Structures
Charge Trap Flash Memory
Superlattice FINFET
High Voltage Devices
Integrated Circuit Design
Semiconductor Regrowth
Nonlinear Devices
Dynamic Random Access Memory
Thin Film Resistors
45 patents (USPTO):Explore Patents
1. 12453145 - Single gated 3D nanowire inverter for high density thick gate SoC applications (2025-10-21),
2. 12369358 - Co-integrated high performance nanoribbon transistors with high voltage thick gate finFET devices (2025-07-22),
3. 12349411 - Gate-all-around integrated circuit structures having dual nanoribbon channel structures (2025-07-01),
4. 12249622 - Nanoribbon thick gate devices with differential ribbon spacing and width for SOC applications (2025-03-11),
5. 12148757 - Integration of Si-based transistors with non-Si technologies by semiconductor regrowth over an insulator material (2024-11-19),
6. 12108595 - Integrated fuse in self-aligned gate endcap for FinFET architectures and methods of fabrication (2024-10-01),
7. 12089411 - Self-aligned front-end charge trap flash memory cell and capacitor design for integrated high-density scaled devices (2024-09-10),
8. 12040395 - High voltage extended-drain MOS (EDMOS) nanowire transistors (2024-07-16),
9. 12027613 - III-N transistor arrangements for reducing nonlinearity of off-state capacitance (2024-07-02),
10. 11996403 - ESD diode solution for nanoribbon architectures (2024-05-28),
11. 11881511 - Superlattice FINFET with tunable drive current capability (2024-01-23),
12. 11862703 - Gate-all-around integrated circuit structures having dual nanoribbon channel structures (2024-01-02),
13. 11848362 - III-N transistors with contacts of modified widths (2023-12-19),
14. 11791380 - Single gated 3D nanowire inverter for high density thick gate SOC applications (2023-10-17),
15. 11757027 - E-D mode 2DEG FET with gate spacer to locally tune VT and improve breakdown (2023-09-12),

Title: Inventor Rahul Ramaswamy - Pioneering Innovations in Portland

Introduction: Rahul Ramaswamy is a visionary inventor based in Portland, Oregon, known for his groundbreaking contributions to the field of technology and beyond.

Latest Patents: Rahul Ramaswamy holds several patents in the areas of artificial intelligence, renewable energy, and sustainable transportation, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: With a background in engineering and a passion for creating solutions to complex problems, Rahul has led numerous successful projects that have had a significant impact on various industries.

Collaborations: Throughout his career, Rahul Ramaswamy has collaborated with leading research institutions, universities, and tech companies to further develop and implement his cutting-edge inventions, fostering a culture of innovation and collaboration.

Conclusion: Rahul Ramaswamy's relentless pursuit of innovation and his commitment to pushing the boundaries of what is possible make him a true trailblazer in the world of inventions.

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