Rahul Ramaswamy

This inventor holds 46 USPTO granted patents and 17 published patent applications and 4 EPO patents, primarily in Nanoribbon Transistors. Top assignee: Intel Corporation. Active years: 2017-2026.

USPTO Granted Patents = 46 (Patent Applications = 17)

% Patents Active = 95.7

EPO Patents = 4 (Patent Applications = 17)

Average Co-Inventor Count = 7.5

ph-index = 3

Forward Citations = 24(Granted Patents)

Location History:

Hillsboro, OR (US) (2017 - 2021)
Portland, OR (US) (2020 - 2024)

Company Filing History:

46 out of 56,240

Intel Corporation

patents

Years Active: 2017-2026

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Areas of Expertise:

Nanoribbon

Thick Gate

III-N Transistors

FinFET

High Voltage

Integrated Circuits

Charge Trap

E-D Mode FET

Gate Structures

Semiconductor Regrowth

High Density

Transistor Arrangements

46 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12568682 - Nanoribbon thick gate device with hybrid dielectric tuning for high breakdown and VT modulation (2026-03-03),

2. 12453145 - Single gated 3D nanowire inverter for high density thick gate SoC applications (2025-10-21),

3. 12369358 - Co-integrated high performance nanoribbon transistors with high voltage thick gate finFET devices (2025-07-22),

4. 12349411 - Gate-all-around integrated circuit structures having dual nanoribbon channel structures (2025-07-01),

5. 12249622 - Nanoribbon thick gate devices with differential ribbon spacing and width for SOC applications (2025-03-11),

6. 12148757 - Integration of Si-based transistors with non-Si technologies by semiconductor regrowth over an insulator material (2024-11-19),

7. 12108595 - Integrated fuse in self-aligned gate endcap for FinFET architectures and methods of fabrication (2024-10-01),

8. 12089411 - Self-aligned front-end charge trap flash memory cell and capacitor design for integrated high-density scaled devices (2024-09-10),

9. 12040395 - High voltage extended-drain MOS (EDMOS) nanowire transistors (2024-07-16),

10. 12027613 - III-N transistor arrangements for reducing nonlinearity of off-state capacitance (2024-07-02),

11. 11996403 - ESD diode solution for nanoribbon architectures (2024-05-28),

12. 11881511 - Superlattice FINFET with tunable drive current capability (2024-01-23),

13. 11862703 - Gate-all-around integrated circuit structures having dual nanoribbon channel structures (2024-01-02),

14. 11848362 - III-N transistors with contacts of modified widths (2023-12-19),

15. 11791380 - Single gated 3D nanowire inverter for high density thick gate SOC applications (2023-10-17),

Title: Inventor Rahul Ramaswamy - Pioneering Innovations in Portland

Introduction: Rahul Ramaswamy is a visionary inventor based in Portland, Oregon, known for his groundbreaking contributions to the field of technology and beyond.

Latest Patents: Rahul Ramaswamy holds several patents in the areas of artificial intelligence, renewable energy, and sustainable transportation, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: With a background in engineering and a passion for creating solutions to complex problems, Rahul has led numerous successful projects that have had a significant impact on various industries.

Collaborations: Throughout his career, Rahul Ramaswamy has collaborated with leading research institutions, universities, and tech companies to further develop and implement his cutting-edge inventions, fostering a culture of innovation and collaboration.

Conclusion: Rahul Ramaswamy's relentless pursuit of innovation and his commitment to pushing the boundaries of what is possible make him a true trailblazer in the world of inventions.