Growing community of inventors

Portland, OR, United States of America

Rahul Ramaswamy

Average Co-Inventor Count = 7.43

ph-index = 2

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 19

Rahul RamaswamyWalid M Hafez (44 patents)Rahul RamaswamyNidhi Nidhi (29 patents)Rahul RamaswamyHsu-Yu Chang (22 patents)Rahul RamaswamyHan Wui Then (19 patents)Rahul RamaswamyJohann Christian Rode (18 patents)Rahul RamaswamyMarko Radosavljevic (17 patents)Rahul RamaswamySansaptak W Dasgupta (16 patents)Rahul RamaswamyPaul B Fischer (15 patents)Rahul RamaswamyTing Chang (14 patents)Rahul RamaswamyChia-Hong Jan (13 patents)Rahul RamaswamyNeville L Dias (12 patents)Rahul RamaswamyRoman W Olac-Vaw (11 patents)Rahul RamaswamyTanuj Trivedi (11 patents)Rahul RamaswamyJeong Dong Kim (10 patents)Rahul RamaswamyBabak Fallahazad (10 patents)Rahul RamaswamyChen-Guan Lee (8 patents)Rahul RamaswamyPei-Chi Liu (3 patents)Rahul RamaswamyJoodong Park (2 patents)Rahul RamaswamySamuel Jack Beach (2 patents)Rahul RamaswamyGlenn A Glass (1 patent)Rahul RamaswamyJeng-Ya David Yeh (1 patent)Rahul RamaswamyCurtis Tsai (1 patent)Rahul RamaswamyGopinath Bhimarasetti (1 patent)Rahul RamaswamyAyan Kar (1 patent)Rahul RamaswamyYang Cao (1 patent)Rahul RamaswamyBenjamin Orr (1 patent)Rahul RamaswamyEverett S Cassidy-Comfort (1 patent)Rahul RamaswamyRohan K Bambery (1 patent)Rahul RamaswamyDaniel B O'Brien (1 patent)Rahul RamaswamySandrine Charue-Bakker (1 patent)Rahul RamaswamySumit Ashtekar (1 patent)Rahul RamaswamyHector M Saavedra Garcia (1 patent)Rahul RamaswamyChristopher Alan Nolph (1 patent)Rahul RamaswamyHeli Chetanbhai Vora (1 patent)Rahul RamaswamyXiaojun Weng (1 patent)Rahul RamaswamyRahul Ramaswamy (44 patents)Walid M HafezWalid M Hafez (168 patents)Nidhi NidhiNidhi Nidhi (38 patents)Hsu-Yu ChangHsu-Yu Chang (30 patents)Han Wui ThenHan Wui Then (250 patents)Johann Christian RodeJohann Christian Rode (18 patents)Marko RadosavljevicMarko Radosavljevic (375 patents)Sansaptak W DasguptaSansaptak W Dasgupta (216 patents)Paul B FischerPaul B Fischer (110 patents)Ting ChangTing Chang (18 patents)Chia-Hong JanChia-Hong Jan (147 patents)Neville L DiasNeville L Dias (17 patents)Roman W Olac-VawRoman W Olac-Vaw (22 patents)Tanuj TrivediTanuj Trivedi (12 patents)Jeong Dong KimJeong Dong Kim (10 patents)Babak FallahazadBabak Fallahazad (10 patents)Chen-Guan LeeChen-Guan Lee (27 patents)Pei-Chi LiuPei-Chi Liu (12 patents)Joodong ParkJoodong Park (40 patents)Samuel Jack BeachSamuel Jack Beach (2 patents)Glenn A GlassGlenn A Glass (172 patents)Jeng-Ya David YehJeng-Ya David Yeh (29 patents)Curtis TsaiCurtis Tsai (27 patents)Gopinath BhimarasettiGopinath Bhimarasetti (22 patents)Ayan KarAyan Kar (17 patents)Yang CaoYang Cao (8 patents)Benjamin OrrBenjamin Orr (7 patents)Everett S Cassidy-ComfortEverett S Cassidy-Comfort (4 patents)Rohan K BamberyRohan K Bambery (4 patents)Daniel B O'BrienDaniel B O'Brien (3 patents)Sandrine Charue-BakkerSandrine Charue-Bakker (3 patents)Sumit AshtekarSumit Ashtekar (1 patent)Hector M Saavedra GarciaHector M Saavedra Garcia (1 patent)Christopher Alan NolphChristopher Alan Nolph (1 patent)Heli Chetanbhai VoraHeli Chetanbhai Vora (1 patent)Xiaojun WengXiaojun Weng (1 patent)
..
Inventor’s number of patents
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Strength of working relationships

Company Filing History:

1. Intel Corporation (44 from 54,320 patents)


44 patents:

1. 12369358 - Co-integrated high performance nanoribbon transistors with high voltage thick gate finFET devices

2. 12349411 - Gate-all-around integrated circuit structures having dual nanoribbon channel structures

3. 12249622 - Nanoribbon thick gate devices with differential ribbon spacing and width for SOC applications

4. 12148757 - Integration of Si-based transistors with non-Si technologies by semiconductor regrowth over an insulator material

5. 12108595 - Integrated fuse in self-aligned gate endcap for FinFET architectures and methods of fabrication

6. 12089411 - Self-aligned front-end charge trap flash memory cell and capacitor design for integrated high-density scaled devices

7. 12040395 - High voltage extended-drain MOS (EDMOS) nanowire transistors

8. 12027613 - III-N transistor arrangements for reducing nonlinearity of off-state capacitance

9. 11996403 - ESD diode solution for nanoribbon architectures

10. 11881511 - Superlattice FINFET with tunable drive current capability

11. 11862703 - Gate-all-around integrated circuit structures having dual nanoribbon channel structures

12. 11848362 - III-N transistors with contacts of modified widths

13. 11791380 - Single gated 3D nanowire inverter for high density thick gate SOC applications

14. 11757027 - E-D mode 2DEG FET with gate spacer to locally tune VT and improve breakdown

15. 11715790 - Charge-induced threshold voltage tuning in III-N transistors

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