The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Dec. 13, 2019
Intel Corporation, Santa Clara, CA (US);
Walid M. Hafez, Portland, OR (US);
Rahul Ramaswamy, Portland, OR (US);
Tanuj Trivedi, Hillsboro, OR (US);
Jeong Dong Kim, Scappoose, OR (US);
Ting Chang, Portland, OR (US);
Babak Fallahazad, Portland, OR (US);
Hsu-Yu Chang, Hillsboro, OR (US);
Nidhi Nidhi, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments disclosed herein include semiconductor devices and methods of forming such semiconductor devices. In an embodiment, the semiconductor device comprises a substrate, and a first transistor over the substrate. In an embodiment, the first transistor comprises a first semiconductor channel above the substrate, a first gate dielectric surrounding the first semiconductor channel, and a first gate electrode over the first gate dielectric. In an embodiment, the semiconductor device further comprises a second transistor over the substrate. In an embodiment, the second transistor comprises a second semiconductor channel above the substrate, a second gate dielectric surrounding the second semiconductor channel, where the second gate dielectric is different than the first gate dielectric, and a second gate electrode over the second gate dielectric, where the first gate electrode and the second gate electrode comprise the same material.