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For the Inventor, By the Inventor

Portland, OR, United States of America

Babak Fallahazad

USPTO Granted Patents = 11 

Average Co-Inventor Count = 7.9

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:

goldMedal11 out of 54,664 
 
Intel Corporation
 patents

Years Active: 2021-2025

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11 patents (USPTO):Explore Patents
1. 12453145 - Single gated 3D nanowire inverter for high density thick gate SoC applications (2025-10-21),
2. 12369358 - Co-integrated high performance nanoribbon transistors with high voltage thick gate finFET devices (2025-07-22),
3. 12349411 - Gate-all-around integrated circuit structures having dual nanoribbon channel structures (2025-07-01),
4. 12249622 - Nanoribbon thick gate devices with differential ribbon spacing and width for SOC applications (2025-03-11),
5. 12040395 - High voltage extended-drain MOS (EDMOS) nanowire transistors (2024-07-16),
6. 11996403 - ESD diode solution for nanoribbon architectures (2024-05-28),
7. 11862703 - Gate-all-around integrated circuit structures having dual nanoribbon channel structures (2024-01-02),
8. 11791380 - Single gated 3D nanowire inverter for high density thick gate SOC applications (2023-10-17),
9. 11581404 - Gate-all-around integrated circuit structures having depopulated channel structures (2023-02-14),
10. 11437483 - Gate-all-around integrated circuit structures having dual nanoribbon channel structures (2022-09-06),
11. 11094782 - Gate-all-around integrated circuit structures having depopulated channel structures (2021-08-17),

Title: The Innovative Contributions of Babak Fallahazad

Introduction

Babak Fallahazad is a notable inventor based in Portland, OR, who has made significant strides in the field of semiconductor technology. With a portfolio of 8 patents, his work primarily focuses on advanced semiconductor devices that enhance the efficiency and performance of electronic systems.

Latest Patents

Fallahazad's recent patents showcase his cutting-edge innovations, including:

1. **Nanoribbon thick gate devices with differential ribbon spacing and width for SOC applications** - This invention includes devices with non-uniform dielectric thicknesses and a specific configuration of first and second semiconductor layers, designed to optimize performance in System on Chip (SoC) applications.

2. **High voltage extended-drain MOS (EDMOS) nanowire transistors** - This revolutionary semiconductor device design includes a substrate with a source region and drain region, featuring a semiconductor body that enhances functionality with varying conductivity types and a strategically positioned gate structure.

Career Highlights

Babak Fallahazad has significantly impacted the semiconductor industry through his work at Intel Corporation. His innovative outlook and technical expertise contribute to the advancement of modern electronic devices. Throughout his career, he has been recognized for pushing the boundaries of semiconductor technologies, thereby shaping the future of integrated circuit designs.

Collaborations

Working alongside talented engineers and fellow inventors like Tanuj Trivedi and Jeong Dong Kim, Fallahazad has fostered a collaborative environment that encourages innovation and problem-solving. These partnerships have played a crucial role in achieving substantial advancements in semiconductor technology.

Conclusion

Babak Fallahazad continues to be an influential figure in the domain of semiconductor innovation. Through his patents and collaborations, he demonstrates a commitment to enhancing technology that powers the devices we rely on today. His work is a testament to the collaborative nature of innovation in the ever-evolving world of electronics.

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