The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2024

Filed:

Dec. 13, 2019
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Nidhi Nidhi, Hillsboro, OR (US);

Rahul Ramaswamy, Portland, OR (US);

Walid M. Hafez, Portland, OR (US);

Hsu-Yu Chang, Hillsboro, OR (US);

Ting Chang, Portland, OR (US);

Babak Fallahazad, Portland, OR (US);

Tanuj Trivedi, Hillsboro, OR (US);

Jeong Dong Kim, Scappoose, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 29/0873 (2013.01); H01L 29/0878 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66704 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/78645 (2013.01); H01L 29/78696 (2013.01);
Abstract

Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment a semiconductor device comprises a substrate, a source region over the substrate, a drain region over the substrate, and a semiconductor body extending from the source region to the drain region. In an embodiment, the semiconductor body has a first region with a first conductivity type and a second region with a second conductivity type. In an embodiment, the semiconductor device further comprises a gate structure over the first region of the semiconductor body, where the gate structure is closer to the source region than the drain region.


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