The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
Dec. 13, 2019
Intel Corporation, Santa Clara, CA (US);
Rahul Ramaswamy, Portland, OR (US);
Walid M. Hafez, Portland, OR (US);
Tanuj Trivedi, Hillsboro, OR (US);
Jeong Dong Kim, Scappoose, OR (US);
Ting Chang, Portland, OR (US);
Babak Fallahazad, Portland, OR (US);
Hsu-Yu Chang, Hillsboro, OR (US);
Nidhi Nidhi, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment, a semiconductor device comprises a substrate, and a first transistor of a first conductivity type over the substrate. In an embodiment, the first transistor comprises a first semiconductor channel, and a first gate electrode around the first semiconductor channel. In an embodiment, the semiconductor device further comprises a second transistor of a second conductivity type above the first transistor. The second transistor comprises a second semiconductor channel, and a second gate electrode around the second semiconductor channel. In an embodiment, the second gate electrode and the first gate electrode comprise different materials.