The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Jun. 23, 2020
Intel Corporation, Santa Clara, CA (US);
Tanuj Trivedi, Hillsboro, OR (US);
Walid M. Hafez, Portland, OR (US);
Rohan Bambery, Hillsboro, OR (US);
Daniel B. O'Brien, Beaverton, OR (US);
Christopher Alan Nolph, Hillsboro, OR (US);
Rahul Ramaswamy, Portland, OR (US);
Ting Chang, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments disclosed herein include a semiconductor device and methods of forming such a device. In an embodiment, the semiconductor device comprises a substrate and a transistor on the substrate. In an embodiment, the transistor comprises a first gate electrode, where the first gate electrode is part of a first array of gate electrodes with a first pitch. In an embodiment, the first gate electrode has a first average grain size. In an embodiment, the semiconductor device further comprises a component cell on the substrate. In an embodiment, the component cell comprises a second gate electrode, where the second gate electrode is part of a second array of gate electrodes with a second pitch that is larger than the first pitch. In an embodiment, the second gate electrode has a second average grain size that is larger than the first average grain size.