The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2024

Filed:

Apr. 22, 2019
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Nidhi Nidhi, Hillsboro, OR (US);

Han Wui Then, Portland, OR (US);

Marko Radosavljevic, Portland, OR (US);

Sansaptak Dasgupta, Hillsboro, OR (US);

Paul B. Fischer, Portland, OR (US);

Rahul Ramaswamy, Portland, OR (US);

Walid M. Hafez, Portland, OR (US);

Johann Christian Rode, Hillsboro, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/8258 (2006.01); H01L 27/092 (2006.01); H01L 27/12 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1207 (2013.01); H01L 21/8258 (2013.01); H01L 27/092 (2013.01); H01L 29/778 (2013.01);
Abstract

Disclosed herein are IC structures, packages, and devices that include Si-based semiconductor material stack monolithically integrated on the same support structure as non-Si transistors or other non-Si-based devices. In some aspects, the Si-based semiconductor material stack may be provided by semiconductor regrowth over an insulator material. Providing a Si-based semiconductor material stack monolithically integrated on the same support structure as non-Si based devices may provide a viable approach to integrating Si-based transistors with non-Si technologies because the Si-based semiconductor material stack may serve as a foundation for forming Si-based transistors.


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