The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Mar. 22, 2019
Intel Corporation, Santa Clara, CA (US);
Nidhi Nidhi, Hillsboro, OR (US);
Rahul Ramaswamy, Portland, OR (US);
Han Wui Then, Portland, OR (US);
Marko Radosavljevic, Portland, OR (US);
Johann Christian Rode, Hillsboro, OR (US);
Paul B. Fischer, Portland, OR (US);
Walid M. Hafez, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Disclosed herein are integrated circuit structures, packages, and devices that include resistors and/or capacitors which may be provided on the same substrate/die/chip as III-N devices, e.g., III-N transistors. An integrated circuit structure, comprising a base structure comprising a III-N material, the base structure having a conductive region of a doped III-N material. The IC structure further comprises a first contact element, including a first conductive element, a dielectric element, and a second conductive element, wherein the dielectric element is between the first conductive element and the second conductive element, and wherein the first conductive element is between the conductive region and the dielectric element. The IC structure further comprises a second contact element electrically coupled to the first contact element via the conductive region.