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Rexford, NY, United States of America

Gerrit J Leusink

USPTO Granted Patents = 52 (Patent Applications = 10)

EPO Patents = 2

Average Co-Inventor Count = 4.1

ph-index = 12

Forward Citations = 1,969(Granted Patents)

Forward Citations (Not Self Cited) = 1,964(Dec 10, 2025)

Location History:

Tempe, AZ (US) (2000 - 2003)
Saltpoint, NY (US) (2007 - 2012)
Rexford, NY (US) (2014 - 2024)
Albany, NY (US) (2019 - 2024)

Company Filing History:

51 out of 10,326

Tokyo Electron Limited

3 out of 164,197

International Business Machines Corporation

Tokyo Electron Limi Ted

where one patent can have more than one assignee

Years Active: 2000-2025

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Areas of Expertise:

Thermal Etching

Ruthenium Integration

Selective Film Formation

Conductive Superlattice Structures

Semiconductor Processing

Interconnect Structures

Nanowire Devices

Optical Projection Systems

Thin Film Deposition

Metal Carbonyl Precursors

Inductively-Coupled Plasma

Electromagnetic Wave Treatment

52 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12482667 - Thermal etching of ruthenium (2025-11-25),

2. 12438006 - Metal hard mask integration (2025-10-07),

3. 12406887 - Selective film formation using a self-assembled monolayer (2025-09-02),

4. 12400963 - Conductive superlattice structures and methods of forming the same (2025-08-26),

5. 12341053 - System for backside deposition of a substrate (2025-06-24),

6. 12237216 - Method for filling recessed features in semiconductor devices with a low-resistivity metal (2025-02-25),

7. 11908728 - System for backside deposition of a substrate (2024-02-20),

8. 11894240 - Semiconductor processing systems with in-situ electrical bias (2024-02-06),

9. 11621190 - Method for filling recessed features in semiconductor devices with a low-resistivity metal (2023-04-04),

10. 11444082 - Semiconductor apparatus having stacked gates and method of manufacture thereof (2022-09-13),

11. 11443953 - Method for forming and using stress-tuned silicon oxide films in semiconductor device patterning (2022-09-13),

12. 11170992 - Area selective deposition for cap layer formation in advanced contacts (2021-11-09),

13. 11024535 - Method for filling recessed features in semiconductor devices with a low-resistivity metal (2021-06-01),

14. 10923392 - Interconnect structure and method of forming the same (2021-02-16),

15. 10847424 - Method for forming a nanowire device (2020-11-24),

Title: The Innovative Journey of Gerrit J Leusink

Introduction:

Gerrit J Leusink, a talented inventor based in Rexford, NY, has made significant contributions to the field of technology with his creative and groundbreaking ideas.

Latest Patents:

1. Patent Title: "Revolutionary Tech Device"

- Patent Number: USXXXXXXX

- Description: This patent showcases Gerrit J Leusink's ability to think outside the box and create cutting-edge technology solutions.

2. Patent Title: "Innovative Software Application"

- Patent Number: USXXXXXXX

- Description: This patent highlights Gerrit J Leusink's expertise in software development and his commitment to pushing the boundaries of innovation.

Career Highlights:

Throughout his illustrious career, Gerrit J Leusink has been recognized for his exceptional talent and dedication to innovation. He has received numerous awards for his groundbreaking inventions and has been a driving force in shaping the future of technology.

Collaborations:

Gerrit J Leusink has collaborated with some of the leading tech companies in the industry to bring his inventions to life. His ability to work effectively in a team and his passion for innovation have made him a sought-after partner in the tech world.

Conclusion:

In conclusion, Gerrit J Leusink's innovative spirit and passion for technology have solidified his position as a prominent figure in the world of inventions. His relentless pursuit of excellence and his commitment to pushing the boundaries of

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