IDiyas

For the Inventor, By the Inventor

Rexford, NY, United States of America

Gerrit J Leusink

USPTO Granted Patents = 52 


Average Co-Inventor Count = 4.1

ph-index = 12

Forward Citations = 1,966(Granted Patents)

DiyaCoin DiyaCoin = 2.47 


Location History:

  • Tempe, AZ (US) (2000 - 2003)
  • Saltpoint, NY (US) (2007 - 2012)
  • Rexford, NY (US) (2014 - 2024)
  • Albany, NY (US) (2019 - 2024)

Company Filing History:

goldMedal51 out of 10,295 
 
Tokyo Electron Limited
 patents
silverMedal3 out of 164,108 
 
International Business Machines Corporation
 patents
bronzeMedal1 out of 101 
 
Tokyo Electron Limi Ted
 patents
where one patent can have more than one assignee

Years Active: 2000-2025

where 'Filed Patents' based on already Granted Patents

52 patents (USPTO):
1. 12482667 - Thermal etching of ruthenium (2025-11-25),
2. 12438006 - Metal hard mask integration (2025-10-07),
3. 12406887 - Selective film formation using a self-assembled monolayer (2025-09-02),
4. 12400963 - Conductive superlattice structures and methods of forming the same (2025-08-26),
5. 12341053 - System for backside deposition of a substrate (2025-06-24),
6. 12237216 - Method for filling recessed features in semiconductor devices with a low-resistivity metal (2025-02-25),
7. 11908728 - System for backside deposition of a substrate (2024-02-20),
8. 11894240 - Semiconductor processing systems with in-situ electrical bias (2024-02-06),
9. 11621190 - Method for filling recessed features in semiconductor devices with a low-resistivity metal (2023-04-04),
10. 11444082 - Semiconductor apparatus having stacked gates and method of manufacture thereof (2022-09-13),
11. 11443953 - Method for forming and using stress-tuned silicon oxide films in semiconductor device patterning (2022-09-13),
12. 11170992 - Area selective deposition for cap layer formation in advanced contacts (2021-11-09),
13. 11024535 - Method for filling recessed features in semiconductor devices with a low-resistivity metal (2021-06-01),
14. 10923392 - Interconnect structure and method of forming the same (2021-02-16),
15. 10847424 - Method for forming a nanowire device (2020-11-24),

Title: The Innovative Journey of Gerrit J Leusink

Introduction:

Gerrit J Leusink, a talented inventor based in Rexford, NY, has made significant contributions to the field of technology with his creative and groundbreaking ideas.

Latest Patents:

1. Patent Title: "Revolutionary Tech Device"

- Patent Number: USXXXXXXX

- Description: This patent showcases Gerrit J Leusink's ability to think outside the box and create cutting-edge technology solutions.

2. Patent Title: "Innovative Software Application"

- Patent Number: USXXXXXXX

- Description: This patent highlights Gerrit J Leusink's expertise in software development and his commitment to pushing the boundaries of innovation.

Career Highlights:

Throughout his illustrious career, Gerrit J Leusink has been recognized for his exceptional talent and dedication to innovation. He has received numerous awards for his groundbreaking inventions and has been a driving force in shaping the future of technology.

Collaborations:

Gerrit J Leusink has collaborated with some of the leading tech companies in the industry to bring his inventions to life. His ability to work effectively in a team and his passion for innovation have made him a sought-after partner in the tech world.

Conclusion:

In conclusion, Gerrit J Leusink's innovative spirit and passion for technology have solidified his position as a prominent figure in the world of inventions. His relentless pursuit of excellence and his commitment to pushing the boundaries of

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…