The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2024

Filed:

Jul. 27, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Ronald Nasman, Averill Park, NY (US);

Gerrit J. Leusink, Rexford, NY (US);

Rodney L. Robison, East Berne, NY (US);

Hoyoung Kang, Guilderland, NY (US);

Daniel Fulford, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/687 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/44 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); C23C 16/505 (2006.01);
U.S. Cl.
CPC ...
H01L 21/68735 (2013.01); C23C 16/4409 (2013.01); C23C 16/4412 (2013.01); C23C 16/455 (2013.01); C23C 16/4585 (2013.01); H01J 37/32449 (2013.01); C23C 16/505 (2013.01); H01L 21/67069 (2013.01);
Abstract

Techniques herein include a process chamber for depositing thin films to backside surfaces of wafers to reduce wafer bowing and distortion. A substrate support provides an annular perimeter seal around the bottom and/or side of the wafer which allows the majority of the substrate backside to be exposed to a process environment. A supported wafer separates the chamber into lower and upper chambers that provide different process environments. The lower section of the processing chamber includes deposition hardware configured to apply and remove thin films. The upper section can remain a chemically inert environment, protecting the existing features on the top surface of the wafer. Multiple exhausts and differential pressures are used to prevent deposition gasses from accessing the working surface of a wafer.


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