The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Jun. 30, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Dina H. Triyoso, Albany, NY (US);

Lior Huli, Albany, NY (US);

Corey Lemley, Troy, NY (US);

Robert D. Clark, Livermore, CA (US);

Gerrit Leusink, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/40 (2006.01); H01L 21/02 (2006.01); H01L 21/32 (2006.01); H01L 21/321 (2006.01); H01L 21/3213 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/02071 (2013.01); H01L 21/02282 (2013.01); H01L 21/3212 (2013.01); H01L 21/32134 (2013.01); H01L 21/68764 (2013.01); H01L 21/76834 (2013.01); H01L 2221/1063 (2013.01);
Abstract

A method of processing a substrate that includes: loading the substrate in a processing system, the substrate including a metal having a metal surface and a first dielectric material having a dielectric material surface, the metal surface and the dielectric material surface being at the same level; etching the metal to form a recessed metal surface below the dielectric material surface; selectively forming a self-assembled monolayer (SAM) on the recessed metal surface using a spin-on process; and depositing a dielectric film including a second dielectric material on the dielectric material surface.


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