The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Jun. 21, 2019
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823462 (2013.01); H01L 21/28158 (2013.01); H01L 29/0669 (2013.01); H01L 29/42364 (2013.01);
Abstract
A method of forming a nanowire device includes providing a substrate containing nanowires between vertical spacers, selectively depositing a high-k film on the nanowires relative to the vertical spacers, and selectively depositing a metal-containing gate electrode layer on the high-k film relative to the vertical spacers. The method can further include selectively depositing a dielectric material on the vertical spacers prior to selectively depositing the high-k film, where the dielectric material has a lower dielectric constant than the high-k film.