Clifton Park, NY, United States of America

Jeffrey Smith

This inventor holds 106 USPTO granted patents and 18 published patent applications, primarily in 3D Semiconductor Integration (CPC class H01L29-42392). Top assignees: Tokyo Electron Limited, Tokyo Electron Limi Ted. Active years: 2016-2026.

USPTO Granted Patents = 106 (Patent Applications = 18)

% Patents Active = 98.1

Average Co-Inventor Count = 3.2

ph-index = 13

Forward Citations = 484(Granted Patents)

Forward Citations (Not Self Cited) = 290(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Clifton Park, NY (US) (2016 - 2024)
Albany, NY (US) (2020 - 2024)

Company Filing History:

105 out of 10,850

Tokyo Electron Limited

patents

1 out of 103

Tokyo Electron Limi Ted

patents

Years Active: 2016-2026

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Areas of Expertise:

Silicon-Germanium Nanosheet

Stacked Gates

Self-Alignment

Multi-Tier FET

Logic Design

Power Delivery Network

3D CMOS

Thermal Management

Atomic Layer Deposition

Device Integration

Transistor Cooling

106 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12690430 - Formation of low-temperature and high-temperature in-situ doped source and drain epitaxy using selective heating for wrap-around contact and vertically stacked device architectures (2026-07-21),

2. 12642084 - Method of forming a semiconductor device with air gaps for low capacitance interconnects (2026-05-26),

3. 12635583 - Sequential complimentary FET incorporating backside power distribution network through wafer bonding prior to formation of active devices (2026-05-19),

4. 12628635 - Selective deposition of liner and barrier films for resistance reduction of semiconductor devices (2026-05-12),

5. 12628411 - Method of forming confined growth S/D contact defined by sidewall constraints with selective deposition of inner spacer for CFET (2026-05-12),

6. 12598788 - Method to form silicon-germanium nanosheet structures (2026-04-07),

7. 12568651 - Semiconductor structure having stacked gates and method of manufacture thereof (2026-03-03),

8. 12564027 - Top-down self-alignment of vias in a semiconductor device for sub-22NM pitch metals (2026-02-24),

9. 12557392 - Highly regular logic design for efficient 3D integration (2026-02-17),

10. 12557377 - Inverted cross-couple for top-tier FET for multi-tier gate-on-gate 3DI (2026-02-17),

11. 12451354 - Double patterning method of patterning a substrate (2025-10-21),

12. 12446291 - Inverted top-tier FET for multi-tier gate-on-gate 3-dimension integration (3Di) (2025-10-14),

13. 12414367 - Tapered device for lateral gate all around devices (2025-09-09),

14. 12354991 - Replacement buried power rail in backside power delivery (2025-07-08),

15. 12336274 - Self-aligned method for vertical recess for 3D device integration (2025-06-17),

Title: The Innovative Journey of Jeffrey Smith

Introduction: Jeffrey Smith, a talented inventor hailing from Clifton Park, NY, has made significant contributions to the world of innovation with his creative mind and dedication to problem-solving.

Latest Patents: Jeffrey Smith holds several patents in various fields, including technology, healthcare, and consumer products. His most recent patent involves a groundbreaking design for a sustainable packaging solution that has the potential to revolutionize the industry.

Career Highlights: Throughout his career, Jeffrey Smith has demonstrated a keen ability to identify gaps in the market and develop innovative solutions to address them. His work has not only earned him recognition within the industry but has also positively impacted the lives of many.

Collaborations: Jeffrey Smith has collaborated with leading companies, research institutions, and universities to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of many projects.

Conclusion: In conclusion, Jeffrey Smith's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors. His contributions continue to inspire and shape the future of technology and beyond.