The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2025

Filed:

Aug. 05, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Lars Liebmann, Mechanicville, NY (US);

Jeffrey Smith, Clifton Park, NY (US);

Daniel Chanemougame, Niskayuna, NY (US);

Paul Gutwin, Williston, VT (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 88/00 (2025.01); H10D 89/10 (2025.01);
U.S. Cl.
CPC ...
H10D 84/856 (2025.01); H10D 88/01 (2025.01); H10D 89/10 (2025.01);
Abstract

Aspects of the present disclosure provide a semiconductor structure. For example, the semiconductor structure can include a lower channel structure, an upper channel structure formed vertically over the lower channel, a first transistor device including lower and upper gates formed around a first portion of the lower and upper channel structures, respectively, and a separation layer formed between and separating the lower and upper gates, and a second transistor device including a common gate formed around a second portion of the lower and upper channel structures. The first portion of the lower channel structure is equal to the first portion of the upper channel structure in width, and has a first width less than a second width of the second portion of the lower channel structure.


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