The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2025

Filed:

Feb. 19, 2024
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Ronald Nasman, Averill Park, NY (US);

Gerrit J. Leusink, Rexford, NY (US);

Rodney L. Robison, East Berne, NY (US);

Hoyoung Kang, Guilderland, NY (US);

Daniel Fulford, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/687 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/505 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/68735 (2013.01); C23C 16/4409 (2013.01); C23C 16/4412 (2013.01); C23C 16/455 (2013.01); C23C 16/4585 (2013.01); H01J 37/32449 (2013.01); C23C 16/505 (2013.01); H01L 21/67069 (2013.01);
Abstract

An apparatus for depositing films on a backside of a substrate includes a processing chamber and a substrate support having an annular support surface. A first gas distribution unit includes a plurality of gas delivery openings arranged along the backside surface of the substrate and configured to direct plasma deposition gas to the backside surface. A second gas distribution unit is configured to flow a second gas into the processing chamber such that the front side surface of the substrate is exposed to the second gas. A controller is configured to control flow of the plasma deposition gas from the first gas distribution unit, flow of the second gas from the second gas distribution unit a vacuum system. The controller maintains a gas pressure differential between the front side surface and the backside surface of the substrate sufficient to prevent passage of the deposition gas from the backside surface.


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