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Shanghai, China

Deyuan Xiao

USPTO Granted Patents = 93 (Patent Applications = 35)

EPO Patents = 4 (Patent Applications = 9)

Average Co-Inventor Count = 1.4

ph-index = 5

Forward Citations = 158(Granted Patents)

Forward Citations (Not Self Cited) = 146(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Shanghai, CN (2009 - 2021)
Shandong, CN (2022)

Company Filing History:

42 out of 1,724

Semiconductor Manufacturing International (Shanghai) Corporation

Zing Semiconductor Corporation

11 out of 3,127

Chinese Academy of Sciences

4. 8 out of 934

Semiconductor Manufacturing International (Beijing) Corporation

Enraytek Optoelectronics Co., Ltd.

Sien (Qingdao) Integrated Circuits Co., Ltd

Semiconductor Manufacturing International Corp.

where one patent can have more than one assignee

Years Active: 2009-2024

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Areas of Expertise:

Neural Device Structure

Nanosheet CMOS Semiconductor

FinFET Devices

Quantum Well Inverter

Transistor Fabrication

Junctionless Transistor

Nonvolatile Memory

Semiconductor Nanowire

High-Voltage Devices

Thermal Processing

Interconnect Structures

Hybrid Integration

93 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12096627 - Stacked neural device structure and manufacturing method thereof (2024-09-17),

2. 11398490 - Stacked neural device structure and manufacturing method thereof (2022-07-26),

3. 11049949 - Gate-all-around gradient-doped nano-sheet complementary inverter and method of making the same (2021-06-29),

4. 11049857 - Nanosheet CMOS semiconductor device and the method of manufacturing the same (2021-06-29),

5. 10923399 - Hybrid integrated semiconductor tri-gate and split dual-gate FinFET devices and method for manufacturing (2021-02-16),

6. 10916544 - Gate-all-around quantum well complementary inverter and method of making the same (2021-02-09),

7. 10720332 - Transistor and fabrication method thereof (2020-07-21),

8. 10615081 - Fin tunneling field effect transistor and manufacturing method thereof (2020-04-07),

9. 10553496 - Complementary metal-oxide-semiconductor field-effect transistor and method thereof (2020-02-04),

10. 10468505 - Cylindrical germanium nanowire device (2019-11-05),

11. 10373880 - Semiconductor device and related manufacturing method (2019-08-06),

12. 10170356 - SOI substrate and manufacturing method thereof (2019-01-01),

13. 10103268 - Vertical junctionless transistor devices (2018-10-16),

14. 10100431 - Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereof (2018-10-16),

15. 10083879 - Semiconductor nanowire device and fabrication method thereof (2018-09-25),

Title: Deyuan Xiao: Pioneering Inventor from Shanghai

Introduction: Deyuan Xiao is a distinguished inventor hailing from Shanghai, China, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Deyuan Xiao's latest patents focus on advancements in artificial intelligence, renewable energy technologies, and sustainable urban development.

Career Highlights: With a career spanning over two decades, Deyuan Xiao has worked with leading tech companies and research institutions, spearheading projects that have led to significant technological advancements.

Collaborations: Throughout his career, Deyuan Xiao has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge sharing.

Conclusion: Deyuan Xiao's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a true visionary in the world of inventions.

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