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For the Inventor, By the Inventor

Shanghai, China

Deyuan Xiao

USPTO Granted Patents = 93 

 

Average Co-Inventor Count = 1.4

ph-index = 5

Forward Citations = 158(Granted Patents)

DiyaCoin DiyaCoin = 0.39 


Inventors with similar research interests:


Location History:

  • Shanghai, CN (2009 - 2021)
  • Shandong, CN (2022)

Company Filing History:

goldMedal42 out of 1,723 
 
Semiconductor Manufacturing International (shanghai) Corporation
 patents
silverMedal22 out of 41 
 
Zing Semiconductor Corporation
 patents
bronzeMedal11 out of 3,086 
 
Chinese Academy of Sciences
 patents
4. 8 out of 934 
 
Semiconductor Manufacturing International (beijing) Corporation
 patents
5. 8 out of 22 
 
Enraytek Optoelectronics Co., Ltd.
 patents
6. 5 out of 23 
 
Sien (qingdao) Integrated Circuits Co., Ltd
 patents
7. 3 out of 77 
 
Semiconductor Manufacturing International Corp.
 patents
where one patent can have more than one assignee

Years Active: 2009-2024

where 'Filed Patents' based on already Granted Patents

93 patents (USPTO):
1. 12096627 - Stacked neural device structure and manufacturing method thereof (2024-09-17),
2. 11398490 - Stacked neural device structure and manufacturing method thereof (2022-07-26),
3. 11049949 - Gate-all-around gradient-doped nano-sheet complementary inverter and method of making the same (2021-06-29),
4. 11049857 - Nanosheet CMOS semiconductor device and the method of manufacturing the same (2021-06-29),
5. 10923399 - Hybrid integrated semiconductor tri-gate and split dual-gate FinFET devices and method for manufacturing (2021-02-16),
6. 10916544 - Gate-all-around quantum well complementary inverter and method of making the same (2021-02-09),
7. 10720332 - Transistor and fabrication method thereof (2020-07-21),
8. 10615081 - Fin tunneling field effect transistor and manufacturing method thereof (2020-04-07),
9. 10553496 - Complementary metal-oxide-semiconductor field-effect transistor and method thereof (2020-02-04),
10. 10468505 - Cylindrical germanium nanowire device (2019-11-05),
11. 10373880 - Semiconductor device and related manufacturing method (2019-08-06),
12. 10170356 - SOI substrate and manufacturing method thereof (2019-01-01),
13. 10103268 - Vertical junctionless transistor devices (2018-10-16),
14. 10100431 - Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereof (2018-10-16),
15. 10083879 - Semiconductor nanowire device and fabrication method thereof (2018-09-25),

Title: Deyuan Xiao: Pioneering Inventor from Shanghai

Introduction: Deyuan Xiao is a distinguished inventor hailing from Shanghai, China, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Deyuan Xiao's latest patents focus on advancements in artificial intelligence, renewable energy technologies, and sustainable urban development.

Career Highlights: With a career spanning over two decades, Deyuan Xiao has worked with leading tech companies and research institutions, spearheading projects that have led to significant technological advancements.

Collaborations: Throughout his career, Deyuan Xiao has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge sharing.

Conclusion: Deyuan Xiao's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a true visionary in the world of inventions.

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