The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2019
Filed:
Sep. 14, 2017
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventor:
Deyuan Xiao, Shanghai, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 21/8252 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8252 (2013.01); H01L 21/845 (2013.01); H01L 27/092 (2013.01); H01L 27/1211 (2013.01); H01L 29/665 (2013.01); H01L 29/7839 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01);
Abstract
A semiconductor device may include a substrate, an n-channel field-effect transistor positioned on the substrate, and a p-channel field-effect transistor positioned on the substrate. The n-channel field-effect transistor may include an n-type silicide source portion, an n-type silicide drain portion, and a first n-type channel region. The first n-type channel region may be positioned between the n-type silicide source portion and the n-type silicide drain portion and may directly contact each of the n-type silicide source portion and the n-type silicide drain portion.