The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2018
Filed:
Nov. 02, 2016
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Deyuan Xiao, Shanghai, CN;
Abstract
A method for fabricating a semiconductor nanowire device includes forming a base including a plurality of PMOS regions, forming a plurality of first openings in the base of the PMOS regions, forming a plurality of first epitaxial wires by filling the first openings with a germanium-containing material, and forming a plurality of second openings in the base by etching a portion of the base under each first epitaxial wire. Each first epitaxial wire is connected to both sidewalls of a corresponding second opening and is hung above a bottom surface of the corresponding second opening. The method also includes performing a thermal oxidation treatment process on the plurality of first epitaxial wires to form an oxide layer on each first epitaxial wire, forming a plurality of first nanowires by removing the oxide layer from each first epitaxial wire, and forming a first wrap-gate structure to surround each first nanowire.