The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2020
Filed:
Jul. 03, 2018
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Deyuan Xiao, Shanghai, CN;
Abstract
A junction-less transistor structure and fabrication method thereof are provided. The method includes providing a semiconductor substrate; and forming an epitaxial layer having a first surface and a second surface on the semiconductor substrate. The method also includes forming a plurality of trenches in the epitaxial layer from the first surface thereof; and forming a gate dielectric layer on side and bottom surfaces of the plurality of trenches. Further, the method includes forming a gate electrode layer on the gate dielectric layer and in the plurality of trenches; and forming an insulation layer on the gate electrode layer. Further, the method also includes forming a drain electrode layer on the first surface of the epitaxial layer; removing the semiconductor substrate; and forming a source electrode layer on the second surface of the epitaxial layer.