Daisuke Matsushita

This inventor holds 56 USPTO granted patents and 1 EPO patent, primarily in Semiconductor Memory (CPC class H01L). Top assignees: Kabushiki Kaisha Toshiba, Toshiba Memory Corporation. Active years: 2006-2018.

USPTO Granted Patents = 56

% Patents Active = 64.3

EPO Patents = 1

Average Co-Inventor Count = 3.4

ph-index = 6

Forward Citations = 191(Granted Patents)

Forward Citations (Not Self Cited) = 178(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Fuchu, JP (2014)
Kanagawa-Ken, JP (2006 - 2016)
Hiratsuka, JP (2007 - 2017)
Yokkaichi, JP (2017)
Fujisawa, JP (2014 - 2018)
Kanagawa, JP (2016 - 2018)

Company Filing History:

52 out of 53,240

Kabushiki Kaisha Toshiba

patents

4 out of 2,955

Toshiba Memory Corporation

patents

Years Active: 2006-2018

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Areas of Expertise:

Nonvolatile Memory

Semiconductor Device

Resistance-Change Memory

Memory Cell Array

Variable Resistance Element

Charge Accumulation Layer

Dielectric Film

Information Recording Device

Electron Scattering

Manufacturing Method

Storage Device

Fluorite-Type Crystal

56 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9935122 - Nonvolatile semiconductor memory device having electron scattering and electron accumulation capacities in charge accumulation layer (2018-04-03),

2. 9928908 - Resistance-change memory operating with read pulses of opposite polarity (2018-03-27),

3. 9865606 - Semiconductor device and semiconductor memory device (2018-01-09),

4. 9780170 - Semiconductor memory device (2017-10-03),

5. 9768265 - Semiconductor memory device (2017-09-19),

6. 9698236 - Semiconductor device and method for manufacturing the same (2017-07-04),

7. 9691973 - Semiconductor device and dielectric film including a fluorite-type crystal (2017-06-27),

8. 9685462 - Semiconductor device and method of manufacturing the same (2017-06-20),

9. 9634248 - Insulator and memory device (2017-04-25),

10. 9601192 - Resistance-change memory having on-state, off-state, and intermediate state (2017-03-21),

11. 9502431 - Nonvolatile semiconductor memory device and method of manufacturing the same (2016-11-22),

12. 9391272 - Nonvolatile variable resistance element (2016-07-12),

13. 9349876 - Nonvolatile semiconductor memory (2016-05-24),

14. 9318532 - Semiconductor memory device (2016-04-19),

15. 9305645 - Variable resistive element, storage device and driving method thereof (2016-04-05),

Title: Daisuke Matsushita: Pioneering Inventor from Fujisawa

Introduction: Daisuke Matsushita is a renowned inventor hailing from Fujisawa, Japan, known for his groundbreaking contributions to various technological fields.

Latest Patents: Matsushita's recent patents include innovative designs in the fields of robotics, artificial intelligence, and sustainable energy solutions.

Career Highlights: With a career spanning over two decades, Matsushita has worked with leading research institutions and universities to develop cutting-edge technologies that have revolutionized industries worldwide.

Collaborations: Matsushita has collaborated with top companies, such as Sony and Toyota, to bring his inventions to the market, showcasing his ability to merge creativity with practical applications.

Conclusion: Daisuke Matsushita's relentless pursuit of innovation and his passion for creating a better future through technology make him a true visionary in the world of inventions.