The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Mar. 07, 2016
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Chika Tanaka, Kanagawa, JP;
Daisuke Matsushita, Kanagawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 27/11 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1116 (2013.01); H01L 27/1104 (2013.01); H01L 29/0834 (2013.01); H01L 29/7391 (2013.01);
Abstract
According to one embodiment, a semiconductor device includes a first region having a first conductivity type in a semiconductor region; a second region having a second conductivity type in the semiconductor region; a gate electrode above a first part of the semiconductor region between the first region and the second region; a gate insulating layer between the first part and the gate electrode; a third region having the first conductivity type below the second region; and a fourth region across the second region and the third region and including a first impurity.