The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Jun. 23, 2015
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Kiwamu Sakuma, Yokkaichi, JP;
Kensuke Ota, Kawasaki, JP;
Masumi Saitoh, Yokkaichi, JP;
Chika Tanaka, Yokohama, JP;
Daisuke Matsushita, Fujisawa, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Abstract
According to one embodiment, a memory device includes a first stacked layer structure stacked in order of a first insulating layer, a first electrode layer, . . . an n-th insulating layer, an n-th electrode layer, and an (n+1)-th insulating layer in a first direction perpendicular to a surface of a semiconductor substrate, where n is a natural number, an oxide semiconductor layer extending through the first to n-th electrode layers in the first direction, a second stacked layer structure provided between the first to n-th electrode layers and the oxide semiconductor layer, and including a charge storage layer which storages charges, and a area provided in the oxide semiconductor layer.