Yokohama, Japan

Kiwamu Sakuma

This inventor holds 59 USPTO granted patents and 11 published patent applications, primarily in Semiconductor Memory Devices (CPC class H01L). Top assignees: Kabushiki Kaisha Toshiba, Toshiba Memory Corporation, Kioxia Corporation. Active years: 2010-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kiwamu Sakuma. Retrieved from https://idiyas.com/inventor/kiwamu-sakuma

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 59 

% Patents Active = 79.7

Average Co-Inventor Count = 3.3

ph-index = 10

Forward Citations = 1,645(Granted Patents)

Forward Citations (Not Self Cited) = 1,576(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Kanagawa-ken, JP (2013 - 2015)
  • Yokohama, JP (2010 - 2018)
  • Mie, JP (2016 - 2022)
  • Yokkaichi, JP (2016 - 2023)
  • Yokkaichi Mie, JP (2020 - 2024)

Company Filing History:


Years Active: 2010-2026

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Areas of Expertise:
Semiconductor Device
Semiconductor Memory Device
Non-Volatile Memory
Manufacturing Method
Hafnium Oxide
Thin Film
Transistor
Oxide Semiconductor
Polycrystalline Silicon
Storage Device
Insulative Portions
59 patents (USPTO):Explore Patents

Title: Innovations of Kiwamu Sakuma: A Pioneer in Semiconductor Technology

Introduction

Kiwamu Sakuma is a prominent inventor and engineer based in Yokohama, Japan, known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 55 patents, Sakuma has played a pioneering role in shaping innovations that enhance the functionality and efficiency of semiconductor devices.

Latest Patents

Among Sakuma's latest inventions are two noteworthy patents that showcase his expertise. The first is a semiconductor device that incorporates a structured design consisting of a first electrode, a second electrode, and an oxide semiconductor layer placed between them. This innovative design also includes a gate electrode, gate insulating layers, and insulating layers that vary in oxygen atom concentrations, which significantly improve operational performance.

The second patent focuses on a semiconductor memory device featuring hafnium oxide insulative portions. The device consists of a substrate and a first semiconductor portion, with a carefully structured arrangement of gate electrodes and insulating portions. The inclusion of hafnium (Hf) and oxygen (O) in the first insulating portion, alongside an orthorhombic crystal structure, marks a significant advancement in semiconductor memory technology.

Career Highlights

Kiwamu Sakuma has made substantial strides in his career, having worked with esteemed companies such as Kabushiki Kaisha Toshiba and Toshiba Memory Corporation. His experience at these organizations has allowed him to impact the semiconductor industry significantly and contribute to the advancement of various technologies.

Collaborations

Throughout his career, Sakuma has collaborated with notable colleagues, including Masumi Saitoh and Masahiro Kiyotoshi. Their teamwork has facilitated the development of innovative solutions and the advancement of semiconductor technology, reflecting the collective effort of brilliant minds in the field.

Conclusion

Kiwamu Sakuma's contributions to semiconductor technology through his numerous patents establish him as a significant figure in the industry. His innovative work continues to inspire advancements in device performance and memory capabilities, solidifying his legacy as a leading inventor in Japan's technological landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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