The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Jun. 16, 2022
Kioxia Corporation, Tokyo, JP;
Taro Shiokawa, Nagoya Aichi, JP;
Kiwamu Sakuma, Yokkaichi Mie, JP;
Keiko Sakuma, Yokkaichi Mie, JP;
Mutsumi Okajima, Yokkaichi Mie, JP;
Kazuhiro Matsuo, Kuwana Mie, JP;
Masaya Toda, Yokkaichi Mie, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer between the first electrode and the second electrode and including a first region surrounded by the first electrode in a plane perpendicular to a first direction from the first electrode toward the second electrode; a gate electrode facing the oxide semiconductor layer; a gate insulating layer; a first insulating layer between the gate electrode and the first electrode; and a second insulating layer between the gate electrode and the second electrode. A first maximum distance between a first portion of the first electrode and a second portion of the first electrode in a second direction in a cross section parallel to the first direction is larger than a minimum distance between a third portion of the first insulating layer and a fourth portion of the first insulating layer in the second direction.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile