Taro Shiokawa

Title: Taro Shiokawa: Innovator in Semiconductor Technology

Introduction

Taro Shiokawa is a prominent inventor based in Nagoya, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work has been instrumental in advancing the capabilities of transistors and semiconductor memory devices.

Latest Patents

Shiokawa's latest patents include innovative designs for transistors and semiconductor memory devices. One of his notable inventions is a transistor that features an upper electrode, a lower electrode, and a gate electrode positioned between them. This design incorporates a columnar portion that penetrates the gate electrode, which consists of a tubular gate insulating film and a semiconductor layer. The semiconductor layer is strategically embedded within the tubular gate insulating film, enhancing the device's performance. Additionally, he has developed a semiconductor device that includes a first and second electrode, an oxide semiconductor layer, and a gate electrode, all designed to optimize functionality and efficiency.

Career Highlights

Throughout his career, Taro Shiokawa has worked with leading companies in the semiconductor industry, including Kioxia Corporation and Toshiba Memory Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in technology.

Collaborations

Shiokawa has collaborated with notable colleagues such as Kiwamu Sakuma and Keiko Sakuma. Their joint efforts have further propelled innovation in the semiconductor field.

Conclusion

Taro Shiokawa's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced electronic devices.