The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
Mar. 03, 2022
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Assignee:
KIOXIA CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H10B 12/00 (2023.01); H10B 41/35 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H01L 29/78642 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); H10B 12/30 (2023.02); H10B 41/35 (2023.02); H10B 43/35 (2023.02);
Abstract
A transistor includes an upper electrode; a lower electrode; a gate electrode disposed between the upper electrode and the lower electrode; and a columnar portion penetrating the gate electrode and provided between the upper electrode and the lower electrode. The columnar portion includes a tubular gate insulating film and a semiconductor layer, the tubular gate insulating film disposed at a first distance away from the upper electrode and in contact with the gate electrode. The semiconductor layer is embedded in the tubular gate insulating film and between the gate insulating film and the upper electrode and in contact with the upper electrode.