The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2024
Filed:
Mar. 09, 2022
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Assignee:
Kioxia Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H10B 12/00 (2023.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); H01L 29/7869 (2013.01); H01L 29/78642 (2013.01);
Abstract
A semiconductor device according to the embodiment includes: a first electrode; a second electrode; an oxide semiconductor layer provided between the first electrode and the second electrode; a gate electrode opposed to the oxide semiconductor layer; a gate insulating layer provided between the oxide semiconductor layer and the gate electrode; a first insulating layer provided between the gate electrode and the first electrode; and a second insulating layer provided between the gate electrode and the second electrode and having an oxygen atom concentration lower than an oxygen atom concentration of the first insulating layer.