The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Sep. 02, 2022
Kioxia Corporation, Tokyo, JP;
Masaya Toda, Yokkaichi, JP;
Tomoki Ishimaru, Yokkaichi, JP;
Ha Hoang, Kuwana, JP;
Kota Takahashi, Yokkaichi, JP;
Kazuhiro Matsuo, Kuwana, JP;
Takafumi Ochiai, Kuwana, JP;
Shoji Honda, Kuwana, JP;
Kenichiro Toratani, Yokkaichi, JP;
Kiwamu Sakuma, Yokkaichi, JP;
Taro Shiokawa, Nagoya, JP;
Mutsumi Okajima, Yokkaichi, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer provided between the first electrode and the second electrode; a gate electrode surrounding the oxide semiconductor layer; and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer, spaced from the first electrode, and containing nitrogen (N). In addition, a first distance between the first electrode and the gate insulating layer in a first direction from the first electrode to the second electrode is smaller than a second distance between the first electrode and the gate electrode in the first direction.