Yokkaichi Mie, Japan

Masaya Toda

USPTO Granted Patents = 3 

Average Co-Inventor Count = 5.3

ph-index = 1


Company Filing History:


Years Active: 2025

where 'Filed Patents' based on already Granted Patents

3 patents (USPTO):

Title: Masaya Toda: Innovator in Semiconductor Technology

Introduction

Masaya Toda is a prominent inventor based in Yokkaichi, Mie, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on advancing memory devices and film forming methods, which are crucial for modern electronics.

Latest Patents

One of Masaya Toda's latest patents is a semiconductor memory device. This device includes a first oxide semiconductor layer situated between a first conductive layer and a second conductive layer. It features a first gate electrode, a first electrode, and a second electrode. Additionally, it incorporates a first capacitor insulating film that contains regions with varying concentrations of titanium, enhancing its functionality.

Another notable patent is for a film forming apparatus and method. This apparatus consists of a chamber with a sidewall, a shower head, and a substrate holder. It is designed to supply gases through various pipes and valves, ensuring efficient gas management during the film formation process.

Career Highlights

Masaya Toda is currently employed at Kioxia Corporation, a leading company in the semiconductor industry. His innovative work has positioned him as a key figure in the development of advanced memory technologies.

Collaborations

Throughout his career, Masaya has collaborated with talented individuals such as Kota Takahashi and Kazuhiro Matsuo. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Masaya Toda's contributions to semiconductor technology exemplify his dedication to innovation. His patents reflect a deep understanding of complex systems and a commitment to advancing the field. His work continues to influence the future of electronics and memory devices.

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