The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Jun. 27, 2023
Kioxia Corporation, Tokyo, JP;
Masaya Toda, Yokkaichi, JP;
Kazuhiro Matsuo, Kuwana, JP;
Kota Takahashi, Yokkaichi, JP;
Kenichiro Toratani, Fujisawa, JP;
Shosuke Fujii, Kuwana, JP;
Shoichi Kabuyanagi, Yokkaichi, JP;
Masayuki Tanaka, Yokohama, JP;
Wakako Moriyama, Yokohama, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer provided between the first electrode and the second electrode and including a first region, a second region, and a third region between the first region and the second region; a gate electrode facing the third region; a first insulating layer facing the first region; a second insulating layer facing the second region; and a gate insulating layer between the gate electrode and the oxide semiconductor layer, containing oxygen (O) and at least one metal element selected from a group consisting of Al, Hf, Zr, La, Y, Zn, In, Sn, and Ga, and having a chemical composition different from that of the oxide semiconductor layer.