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For the Inventor, By the Inventor

Kuwana, Japan

Shosuke Fujii

USPTO Granted Patents = 58 

 

Average Co-Inventor Count = 3.3

ph-index = 7

Forward Citations = 595(Granted Patents)

Forward Citations (Not Self Cited) = 580(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Yokohama, JP (2011 - 2015)
  • Kanagawa, JP (2013 - 2015)
  • Kanaga-ken, JP (2016)
  • Kanagawa-ken, JP (2012 - 2017)
  • Fujisawa, JP (2014 - 2018)
  • Kobe, JP (2019)
  • Kuwana Mei, JP (2020)
  • Kuwana, JP (2015 - 2023)

Company Filing History:

goldMedal39 out of 52,735 
 
Kabushiki Kaisha Toshiba
 patents
silverMedal18 out of 2,955 
 
Toshiba Memory Corporation
 patents
bronzeMedal1 out of 2,750 
 
Kioxia Corporation
 patents

Years Active: 2011-2023

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Areas of Expertise:
Semiconductor Memory Device
Nonvolatile Memory Device
Resistance-Change Memory
Hafnium Oxide
Memory Element
Ferroelectric Layer
3D Non-Volatile Memory
Variable Resistance Element
Memory Cell Array
Storage Device
Resistance Random Access Memory
Information Recording Device
58 patents (USPTO):Explore Patents
1. 11665908 - Semiconductor memory device incorporating hafnium oxide insulative portions (2023-05-30),
2. 10916654 - Semiconductor memory device (2021-02-09),
3. 10833103 - Semiconductor memory device (2020-11-10),
4. 10784312 - Semiconductor memory device (2020-09-22),
5. 10249818 - Memory element (2019-04-02),
6. 10153326 - Memory device (2018-12-11),
7. 10103328 - Nonvolatile memory device (2018-10-16),
8. 10096619 - Semiconductor device, manufacturing method for semiconductor device, and ferroelectric layer (2018-10-09),
9. 10038032 - Semiconductor memory device, semiconductor device, and method for manufacturing the same (2018-07-31),
10. 9997569 - Memory device (2018-06-12),
11. 9954167 - Memory device including a layer including hafnium oxide and method for manufacturing the same (2018-04-24),
12. 9947685 - 3D non-volatile memory array utilizing metal ion source (2018-04-17),
13. 9928908 - Resistance-change memory operating with read pulses of opposite polarity (2018-03-27),
14. 9882127 - Nonvolatile resistance change element (2018-01-30),
15. 9865809 - Nonvolatile resistance change element (2018-01-09),

Title: The Innovative Journey of Shosuke Fujii

Introduction: Shosuke Fujii, a pioneering inventor hailing from Kuwana, Japan, has made significant contributions to the world of technology and innovation.

Latest Patents: Shosuke Fujii's latest patents include groundbreaking inventions in the field of robotics, specifically focusing on artificial intelligence integration for autonomous systems.

Career Highlights: With a career spanning over two decades, Shosuke Fujii has been at the forefront of technological advancements. His work has revolutionized industries such as healthcare, manufacturing, and transportation.

Collaborations: Throughout his career, Shosuke Fujii has collaborated with leading research institutions, universities, and tech companies to further develop and implement his innovative ideas. His collaborative efforts have led to the creation of cutting-edge solutions that have had a lasting impact on society.

Conclusion: Shosuke Fujii's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his position as a visionary inventor. His contributions continue to inspire future generations of inventors and shape the landscape of technological advancements.

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