The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Mar. 13, 2023
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Shoichi Kabuyanagi, Yokkaichi Mie, JP;

Tsuyoshi Sugisaki, Yokkaichi Mie, JP;

Shosuke Fujii, Kuwana Mie, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/00 (2026.01); H10D 30/63 (2025.01); H10D 62/13 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10W 20/056 (2026.01); H10D 62/151 (2025.01); H10D 64/519 (2025.01); H10W 20/063 (2026.01); H10D 30/63 (2025.01);
Abstract

A semiconductor device according to an embodiment includes a first conductor, a first oxide semiconductor, a first insulator, a second conductor, a third conductor, and a fourth conductor. The first oxide semiconductor contacts, at one end, the first conductor, and extends in a first direction intersecting a surface of the first conductor. The first insulator surrounds a side surface of the first oxide semiconductor. The second conductor and the first oxide semiconductor interpose the first insulator therebetween. The third conductor contacts another end of the first oxide semiconductor. The fourth conductor extends in a second direction intersecting the first direction, and contacts a second conductor on a side opposite to the first insulator. The second conductor is of a material with a higher work function than a material of the fourth conductor.


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