The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Jun. 21, 2023
Kioxia Corporation, Tokyo, JP;
Shosuke Fujii, Kuwana Mie, JP;
Kotaro Noda, Yokkaichi Mie, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A semiconductor device according to an embodiment includes: a first electrode; a second electrode; a gate electrode between the first electrode and the second electrode; a first insulating layer; a second insulating layer; a gate insulating layer surrounding the gate electrode; an oxide semiconductor layer surrounding the gate insulating layer, the oxide semiconductor layer including a first region between the gate insulating layer and the first electrode, a second region between the gate insulating layer and the second electrode, a third region between the gate insulating layer and the first insulating layer, and a fourth region between the gate insulating layer and the second insulating layer. A first thickness of the first region and a second thickness of the second region are equal to or less than at least one of a third thickness of the third region or a fourth thickness of the fourth region.