The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2020

Filed:

Sep. 06, 2019
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Haruka Sakuma, Yokkaichi, JP;

Hidenori Miyagawa, Yokkaichi, JP;

Shosuke Fujii, Kuwana, JP;

Kiwamu Sakuma, Yokkaichi, JP;

Fumitaka Arai, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); H01L 27/11597 (2017.01); H01L 29/51 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 23/528 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11597 (2013.01); G11C 11/223 (2013.01); G11C 11/2275 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); H01L 23/528 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 29/516 (2013.01); H01L 29/517 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/30604 (2013.01); H01L 21/31116 (2013.01); H01L 29/40111 (2019.08);
Abstract

A semiconductor memory device includes: a substrate; a plurality of first semiconductor portions arranged in a first direction intersecting a surface of the substrate; a first gate electrode extending in the first direction, the first gate electrode facing the plurality of first semiconductor portions from a second direction intersecting the first direction; a first insulating portion provided between the first semiconductor portions and the first gate electrode; a first wiring separated from the first gate electrode in the first direction; a second semiconductor portion connected to one end in the first direction of the first gate electrode and to the first wiring; a second gate electrode facing the second semiconductor portion; and a second insulating portion provided between the second semiconductor portion and the second gate electrode.


Find Patent Forward Citations

Loading…