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For the Inventor, By the Inventor

Yokkaichi, Japan

Hidenori Miyagawa

This inventor holds 32 USPTO granted patents, primarily in Semiconductor Memory. Top assignees: Kabushiki Kaisha Toshiba, Toshiba Memory Corporation, Kioxia Corporation. Active years: 2014-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hidenori Miyagawa. Retrieved from https://idiyas.com/inventor/hidenori-miyagawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 32

% Patents Active = 96.9

Average Co-Inventor Count = 3.5

ph-index = 4

Forward Citations = 59(Granted Patents)


Location History:

  • Fuchu, JP (2014)
  • Kanagawa-ken, JP (2014 - 2015)
  • Mie, JP (2015 - 2016)
  • Yokohama, JP (2014 - 2018)
  • Yokkaichi Mie, JP (2020)
  • Yokkaichi, JP (2015 - 2023)

Company Filing History:

goldMedal18 out of 53,286 
 
Kabushiki Kaisha Toshiba
 patents
silverMedal9 out of 2,955 
 
Toshiba Memory Corporation
 patents
bronzeMedal5 out of 3,216 
 
Kioxia Corporation
 patents

Years Active: 2014-2026

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Areas of Expertise:
Semiconductor Memory Device
Ferroelectric Memory Device
Hafnium Oxide
Nonvolatile Resistance Change Element
Variable Resistance
Resistance Random Access Memory
Multi-Region Semiconductor Layer
Stacked Variable Resistance Layer
Nonvolatile Semiconductor Memory
Resistance Change Element
Memory Device
Storage Device
32 patents (USPTO):Explore Patents
1. 12755785 - Storage device and method of controlling storage device (2026-10-06),
2. 12684770 - Semiconductor memory device (2026-07-14),
3. 11744070 - Semiconductor memory device (2023-08-29),
4. 11665908 - Semiconductor memory device incorporating hafnium oxide insulative portions (2023-05-30),
5. 11437403 - Ferroelectric memory device (2022-09-06),
6. 10896914 - Semiconductor memory device (2021-01-19),
7. 10833103 - Semiconductor memory device (2020-11-10),
8. 10672788 - Semiconductor memory device having a multi-region semiconductor layer (2020-06-02),
9. 10615170 - Semiconductor memory device (2020-04-07),
10. 10367054 - Semiconductor memory device (2019-07-30),
11. 10153326 - Memory device (2018-12-11),
12. 9882127 - Nonvolatile resistance change element (2018-01-30),
13. 9865809 - Nonvolatile resistance change element (2018-01-09),
14. 9806091 - Semiconductor memory device (2017-10-31),
15. 9412937 - Memory device (2016-08-09),

Title: The Innovative Journey of Hidenori Miyagawa

Introduction:

Hidenori Miyagawa, a pioneering inventor hailing from Yokkaichi, Japan, has made significant contributions to the world of technology through his groundbreaking innovations and patents.

Latest Patents:

Miyagawa's latest patents include advancements in renewable energy technologies, specifically in the field of solar power efficiency and storage solutions. His innovative approach has garnered attention for its potential to revolutionize the renewable energy sector.

Career Highlights:

With a career spanning over two decades, Miyagawa has established himself as a leading figure in the tech industry. His work has been instrumental in shaping the future of sustainable energy and environmental conservation. Miyagawa's dedication to pushing the boundaries of innovation has led to numerous successful projects and collaborations.

Collaborations:

Throughout his career, Miyagawa has collaborated with top research institutions and leading tech companies to bring his inventions to life. His ability to work across disciplines and industries has resulted in the development of cutting-edge technologies that have the potential to impact global sustainability efforts.

Conclusion:

In conclusion, Hidenori Miyagawa's relentless pursuit of innovation and commitment to creating a more sustainable future have solidified his reputation as a visionary inventor. His contributions to the field of renewable energy and technology continue to inspire and pave the way for a brighter tomorrow.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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