The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Sep. 06, 2016
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventors:
Assignee:
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/1159 (2017.01); H01L 27/11507 (2017.01); H01L 49/02 (2006.01); C23C 14/08 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 27/11514 (2017.01); H01L 27/11597 (2017.01); G11C 11/22 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1159 (2013.01); C23C 14/083 (2013.01); H01L 21/02181 (2013.01); H01L 21/02266 (2013.01); H01L 21/3105 (2013.01); H01L 27/11507 (2013.01); H01L 27/11514 (2013.01); H01L 27/11597 (2013.01); H01L 28/40 (2013.01); H01L 29/517 (2013.01); H01L 29/78391 (2014.09); G11C 11/221 (2013.01); H01L 29/516 (2013.01);
Abstract
A semiconductor device according to an embodiment includes a first conductive layer, a second conductive layer, and a ferroelectric layer including hafnium oxide provided between the first conductive layer and the second conductive layer, a sum of hafnium (Hf) and oxygen (O) in the hafnium oxide being 98 atomic percent or more.