Tsunehiro Ino

This inventor holds 45 USPTO granted patents and 10 published patent applications, primarily in Semiconductor Memory Devices. Top assignees: Kabushiki Kaisha Toshiba, Kioxia Corporation, Toshiba Memory Corporation. Active years: 2006-2026.

USPTO Granted Patents = 45 (Patent Applications = 10)

% Patents Active = 68.9

Average Co-Inventor Count = 2.8

ph-index = 7

Forward Citations = 130(Granted Patents)

Location History:

Kawasaki, JP (2006 - 2008)
Kanagawa-Ken, JP (2006 - 2013)
Kanagawa, JP (2011 - 2015)
Fujisawa, JP (2009 - 2022)
Fujisawa Kanagawa, JP (2021 - 2023)

Company Filing History:

25 out of 53,211

Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

patents

Years Active: 2006-2026

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Areas of Expertise:

Semiconductor Device

Memory Device

Ferroelectric Layer

Nonvolatile Memory

Charge Accumulating Layer

Conductive Layer

Dielectric Film

Storage Capacity

Electron Scattering

Metal Chalcogenide

Substrate Treatment

Lanthanoid Aluminate

45 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12615777 - Semiconductor device with improved channel mobility (2026-04-28),

2. 12507423 - Memory device and conductive layer (2025-12-23),

3. 12310266 - Storage device (2025-05-20),

4. 12261041 - Semiconductor device manufacturing method, semiconductor memory device manufacturing method, semiconductor memory device, and substrate treatment apparatus (2025-03-25),

5. 12160994 - Memory device with ferroelectric layer (2024-12-03),

6. 11683943 - Memory device with a plurality of metal chalcogenide layers (2023-06-20),

7. 11380773 - Ferroelectric memory device (2022-07-05),

8. 11355511 - Semiconductor memory device (2022-06-07),

9. 11282850 - Semiconductor memory device having a charge accumulating layer including aluminum, oxygen, and nitrogen (2022-03-22),

10. 11171156 - Ferroelectric memory device (2021-11-09),

11. 10923500 - Memory device (2021-02-16),

12. 10861528 - Semiconductor memory device (2020-12-08),

13. 10833098 - Semiconductor memory device and method for manufacturing the same with increased storage capacity (2020-11-10),

14. 10636468 - Semiconductor memory device (2020-04-28),

15. 10510862 - Semiconductor memory device (2019-12-17),

Title: Tsunehiro Ino: Pioneering Inventor from Fujisawa

Introduction: Tsunehiro Ino is a renowned inventor hailing from Fujisawa, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Tsunehiro Ino holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: Throughout his illustrious career, Tsunehiro Ino has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have revolutionized various industries.

Collaborations: Tsunehiro Ino has collaborated with top engineers, scientists, and inventors from around the world, fostering a culture of innovation and knowledge-sharing that has led to numerous successful projects and inventions.

Conclusion: Tsunehiro Ino's passion for innovation, coupled with his relentless drive to push the boundaries of what is possible, has solidified his reputation as a trailblazing inventor in the global tech community.