Tsunehiro Ino

USPTO Granted Patents = 43 (Patent Applications = 10)

Average Co-Inventor Count = 2.9

ph-index = 6

Forward Citations = 117(Granted Patents)

Location History:

Kawasaki, JP (2006 - 2008)
Kanagawa-Ken, JP (2006 - 2013)
Kanagawa, JP (2011 - 2015)
Fujisawa, JP (2009 - 2022)
Fujisawa Kanagawa, JP (2021 - 2023)

Company Filing History:

25 out of 52,735

Kabushiki Kaisha Toshiba

patents

10 out of 2,955

Toshiba Memory Corporation

Years Active: 2006-2025

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Areas of Expertise:

Storage Device

Semiconductor Device

Ferroelectric Memory Device

Nonvolatile Memory Device

Memory Device

Charge Accumulating Layer

Dielectric Film

Lanthanoid Aluminate Film

Memory Element

Integrated Circuit

Substrate Treatment Apparatus

Metal Chalcogenide Layers

43 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12310266 - Storage device (2025-05-20),

2. 12261041 - Semiconductor device manufacturing method, semiconductor memory device manufacturing method, semiconductor memory device, and substrate treatment apparatus (2025-03-25),

3. 12160994 - Memory device with ferroelectric layer (2024-12-03),

4. 11683943 - Memory device with a plurality of metal chalcogenide layers (2023-06-20),

5. 11380773 - Ferroelectric memory device (2022-07-05),

6. 11355511 - Semiconductor memory device (2022-06-07),

7. 11282850 - Semiconductor memory device having a charge accumulating layer including aluminum, oxygen, and nitrogen (2022-03-22),

8. 11171156 - Ferroelectric memory device (2021-11-09),

9. 10923500 - Memory device (2021-02-16),

10. 10861528 - Semiconductor memory device (2020-12-08),

11. 10833098 - Semiconductor memory device and method for manufacturing the same with increased storage capacity (2020-11-10),

12. 10636468 - Semiconductor memory device (2020-04-28),

13. 10510862 - Semiconductor memory device (2019-12-17),

14. 10403815 - Semiconductor device and dielectric film (2019-09-03),

15. 10096619 - Semiconductor device, manufacturing method for semiconductor device, and ferroelectric layer (2018-10-09),

Title: Tsunehiro Ino: Pioneering Inventor from Fujisawa

Introduction: Tsunehiro Ino is a renowned inventor hailing from Fujisawa, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Tsunehiro Ino holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: Throughout his illustrious career, Tsunehiro Ino has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have revolutionized various industries.

Collaborations: Tsunehiro Ino has collaborated with top engineers, scientists, and inventors from around the world, fostering a culture of innovation and knowledge-sharing that has led to numerous successful projects and inventions.

Conclusion: Tsunehiro Ino's passion for innovation, coupled with his relentless drive to push the boundaries of what is possible, has solidified his reputation as a trailblazing inventor in the global tech community.

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10 patents pending:

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