The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Sep. 03, 2015
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventor:
Tsunehiro Ino, Fujisawa, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 29/78 (2006.01); H01L 27/11507 (2017.01); H01L 49/02 (2006.01); G11C 11/22 (2006.01); H01L 27/1159 (2017.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); G11C 11/223 (2013.01); H01L 27/1159 (2013.01); H01L 27/11507 (2013.01); H01L 28/40 (2013.01); H01L 29/7843 (2013.01); H01L 29/78391 (2014.09); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01);
Abstract
A semiconductor device according to an embodiment includes a first conductive layer, a second conductive layer, and a ferroelectric film or a ferrielectric film provided between the first conductive layer and the second conductive layer, the ferroelectric film or the ferrielectric film including hafnium oxide containing at least one first element selected from Zn, Mg, Mn, Nb, Sc, Fe, Cr, Co, In, Li and N.