The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
Jun. 10, 2022
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Tsunehiro Ino, Fujisawa, JP;
Akira Takashima, Fuchu, JP;
Assignee:
Kioxia Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/30 (2006.01); C23C 16/40 (2006.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 21/02326 (2013.01); C23C 16/303 (2013.01); C23C 16/403 (2013.01); H01L 21/02178 (2013.01); H10B 43/27 (2023.02);
Abstract
A semiconductor device manufacturing method of embodiments includes: forming an aluminum nitride film; forming an aluminum hydroxide film containing diaspore-type aluminum hydroxide by performing treatment in a fluid containing water to the aluminum nitride film; and forming an aluminum oxide film containing α-type aluminum oxide by performing heat treatment to the aluminum hydroxide film at a temperature equal to or more than 500° C. and equal to or less than 800° C.