The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2024
Filed:
Feb. 24, 2022
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Tsunehiro Ino, Fujisawa, JP;
Akira Takashima, Fuchu, JP;
Assignee:
Kioxia Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H10B 51/30 (2023.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H10B 51/20 (2023.01);
U.S. Cl.
CPC ...
H10B 51/30 (2023.02); H01L 29/516 (2013.01); H01L 29/78391 (2014.09); H10B 51/20 (2023.02);
Abstract
A memory device according to an embodiment includes a semiconductor layer, a gate electrode layer, and a first dielectric layer provided between the semiconductor layer and the gate electrode layer. The first dielectric layer contains aluminum (Al), a first element, nitrogen (N), and silicon (Si). The first element is at least one element selected from the group consisting of scandium (Sc), yttrium (Y), lanthanoid (Ln), boron (B), gallium (Ga), and indium (In).