The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Mar. 21, 2019
Applicant:
Toshiba Memory Corporation, Tokyo, JP;
Inventors:
Tsunehiro Ino, Fujisawa Kanagawa, JP;
Yuuichi Kamimuta, Yokkaichi Mie, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/1159 (2017.01); H01L 27/11597 (2017.01); H01L 27/11507 (2017.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1159 (2013.01); H01L 27/11507 (2013.01); H01L 27/11597 (2013.01); H01L 27/2463 (2013.01);
Abstract
A memory device according to an embodiment includes a first conductive layer, a second conductive layer, and a first layer provided between the first conductive layer and the second conductive layer and containing aluminum oxide that contains at least one first element selected from the group consisting of magnesium (Mg), silicon (Si), hafnium (Hf), tungsten (W), and ruthenium (Ru), and the aluminum oxide is a ferroelectric.